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IS42S32400F-6BLI
IC DRAM 128MBIT PAR 90TFBGA
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Spezifikationen
| Part Status | Obsolete |
| DigiKey Programmable | Not Verified |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM |
| Memory Size | 128Mbit |
| Memory Organization | 4M x 32 |
| Memory Interface | Parallel |
| Voltage - Supply | 3V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 90-TFBGA |
| Supplier Device Package | 90-TFBGA (8x13) |
| Base Product Number | IS42S32400 |
| Clock Frequency | 166 MHz |
| Access Time | 5.4 ns |
Übersicht
Description
This DRAM is designed for synchronous operation, meaning it can operate in sync with the system clock, allowing for faster data transfer rates compared to asynchronous DRAM types. The '-6BLI' suffix indicates specific features, such as speed grade and package type. Typically, these chips are offered in various packaging options, enabling flexibility in design and integration.
Overall, the IS42S32400F-6BLI is a reliable choice for applications requiring moderate memory capacity with efficient performance characteristics.
Features
- Type: DDR SDRAM, 3.2V operation.
- Density: 256Mb organized as 4 banks of 8 bits x 16.
- Speed: Operates at 133 MHz with a data transfer rate of 2.1 Gb/s.
- Package: Offered in a 66-pin TSOP II package for efficient space utilization.
- Functionality: Supports burst lengths of 2, 4, or 8 and has a 4n prefetch architecture.
- Latency: Low latency for improved performance in memory-intensive applications.
- Temperature Range: Typically operates in an industrial temperature range, enhancing reliability in various environments.
- Applications: Ideal for consumer electronics, networking equipment, and other computing devices requiring reliable and fast memory.
This chip is well-suited for applications that demand high-speed data processing and efficiency.
Package
Pinout
Key functions:
1. Data Bus: 8-bit wide data input/output.
2. Address Bus: Supports row and column addressing for selecting memory locations.
3. Control Signals: Includes various control pins such as Chip Select (CS), Clock Enable (CKE), Write Enable (WE), and Output Enable (OE) for managing read/write operations and refreshing.
4. Power Management: Features pins for power supply and ground connections, ensuring proper operation within specified electrical characteristics.
This device is designed for high-speed memory applications, suitable for use in various electronic devices requiring efficient data storage and retrieval.
Manufacturer
Application
Equivalent
1. MT48LC32M16A2 - Micron
2. HY58G256LF - Hynix
3. K4S641632B - Samsung
4. EMM 256M DRAM - Various manufacturers
Ensure to check specifications like voltage and timing settings for compatibility.
Versand
VersandmethodenWir
bieten Sie globale Versanddienstleistungen durch DHL, FedEx, TNT, UPS oder einen anderen Spediteur Ihrer Wahl.
Versandgebührenreferenz (DHL/FedEx):
DHL: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 2-5 Werktagen.
von FedEx: Versandkosten reichen von $25-$40 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.
UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.
TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.
EMS: Versandkosten reichen von $30-$50 (0.5kg), mit einer geschätzten Lieferzeit von 7-15 Werktagen.
Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.
Zahlungen
Payment Methods
Die Zahlungsfrist ist 100% Prepaid.
Derzeit akzeptieren wir nur die folgenden Zahlungsmethoden:
1. PayPal
2. Kredit- / Debitkarte
3. Überweisung
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