IS46DR16640C-25DBLA2-TR

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IS46DR16640C-25DBLA2-TR

IC DRAM 1GBIT PARALLEL 84TWBGA

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Spezifikationen

Part Status Active
DigiKey Programmable Not Verified
Memory Type Volatile
Memory Format DRAM
Technology SDRAM - DDR2
Memory Size 1Gbit
Memory Organization 64M x 16
Memory Interface Parallel
Clock Frequency 400 MHz
Write Cycle Time - Word, Page 15ns
Access Time 400 ps
Voltage - Supply 1.7V ~ 1.9V
Operating Temperature -40°C ~ 105°C (TA)
Mounting Type Surface Mount
Package / Case 84-TFBGA
Supplier Device Package 84-TWBGA (8x12.5)
Base Product Number IS46DR16640

Übersicht

Description

The IS46DR16640C-25DBLA2-TR is a high-performance DDR3 SDRAM (Synchronous Dynamic Random-Access Memory) device. It features a 4Gb (gigabit) capacity organized in a x4, x8, or x16 configuration, making it suitable for various applications in computing and embedded systems. This particular model operates at a clock speed of 800 MHz with a data rate of 1600 MT/s (megatransfers per second).
The key features include low power consumption, making it ideal for energy-efficient designs, and a wide operating temperature range, ensuring reliability in diverse environments. It supports advanced features like burst lengths of 8 and 4, which enhance data throughput and efficiency.
The device is available in a compact package, typically a BGA (Ball Grid Array), facilitating easy integration into modern PCB layouts. Its compatibility with standard DDR3 interfaces makes it a versatile choice for memory-intensive applications like servers, networking equipment, and high-performance computing systems. Overall, the IS46DR16640C-25DBLA2-TR is designed to meet the demands of contemporary digital applications while providing robust performance and efficiency.

Features

The IS46DR16640C-25DBLA2-TR is a 64Mb (8MB) DDR2 SDRAM memory chip designed for high-performance applications. Key features include:
1. Density: 64 Megabits organized as 8 Meg x 8 bits.
2. Speed: Operates at a clock speed of 400 MHz, supporting DDR2 with data rates up to 800 MT/s.
3. Voltage: Operates at a low voltage of 1.8V, enhancing energy efficiency.
4. Package Type: Offered in a 54-ball TFBGA (Thin Fine Ball Grid Array) package, which is compact and suitable for space-constrained applications.
5. Access Time: Offers a CAS latency of 5 or 6, allowing for efficient data retrieval.
6. Applications: Ideal for various applications including consumer electronics, networking, and mobile devices.
The chip's design ensures reliable performance, thermal management, and compatibility with existing DDR2 interfaces, making it suitable for both industrial and commercial uses.

Package

The IS46DR16640C-25DBLA2-TR is packaged in a 60-ball TFBGA (Thin Fine Ball Grid Array) package. This type of package is designed for high-density applications and provides efficient thermal performance and small form factor suitable for memory devices.

Pinout

The IS46DR16640C-25DBLA2-TR is a 16Mb (2M x 8 bits) DDR3 SDRAM memory chip packaged in a 78-ball TFBGA (Thin Fine Ball Grid Array) configuration. The pin count is 78 balls.
The key functions of the pins include:
- Data Input/Output (DQ): 8 data lines (DQ0-DQ7) for data transmission.
- Address Inputs (A): Address lines (A0-A11) for addressing memory locations.
- Control Pins:
- CS (Chip Select) to enable or disable the chip.
- CK and CK# (Clock and Inverted Clock) for timing control.
- RAS, CAS, WE (Row Address Strobe, Column Address Strobe, Write Enable) for read and write operations.
- Bank Select (BA): For selecting memory banks.
- ODT (On-Die Termination): For impedance matching.
- VDD, VSS: Power supply and ground connections.
This device is used in applications requiring high-speed memory with low power consumption.

Manufacturer

The IS46DR16640C-25DBLA2-TR is manufactured by Integrated Silicon Solution, Inc. (ISSI), a company specializing in semiconductor products. ISSI focuses primarily on designing and manufacturing high-performance memory solutions, including SRAM, DRAM, and Flash memory. The company serves various markets such as automotive, consumer electronics, telecommunications, and industrial applications. ISSI is known for its innovative memory technologies and is recognized for its commitment to quality and reliability in the semiconductor industry.

Application

The IS46DR16640C-25DBLA2-TR is a 64Mb DRAM (Dynamic Random-Access Memory) chip used in various applications, including:
1. Consumer electronics (e.g., TVs, gaming consoles)
2. Networking devices (e.g., routers, switches)
3. Automotive systems (e.g., infotainment, advanced driver-assistance systems)
4. Industrial automation and control
5. Mobile devices (e.g., smartphones, tablets)
Its high-speed performance and low power consumption make it suitable for applications requiring efficient data storage and processing.

Equivalent

The IS46DR16640C-25DBLA2-TR is a 1Gb DDR3 SDRAM memory chip. Equivalent products include:
1. Micron MT41J1G16HA-125
2. Samsung K4B4G1646D-25
3. Hynix H5TQ1G83EFR-PBA
Always verify compatibility with your specific application and requirements.

Versand

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Versandgebührenreferenz (DHL/FedEx):

DHL: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 2-5 Werktagen.

von FedEx: Versandkosten reichen von $25-$40 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

EMS: Versandkosten reichen von $30-$50 (0.5kg), mit einer geschätzten Lieferzeit von 7-15 Werktagen.

Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.

Zahlungen

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