ISC027N10NM6ATMA1

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ISC027N10NM6ATMA1

TRENCH >=100V PG-TDSON-8

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Spezifikationen

Series OptiMOS™ 6
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 23A (Ta), 192A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 8V, 10V
Rds On (Max) @ Id, Vgs 2.7mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 3.3V @ 116µA
Gate Charge (Qg) (Max) @ Vgs 72.5 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 5500 pF @ 50 V
Power Dissipation (Max) 3W (Ta), 217W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TDSON-8 FL
Package / Case 8-PowerTDFN
Base Product Number ISC027N

Übersicht

Description

The ISC027N10NM6ATMA1 is a high-performance N-channel MOSFET designed for applications requiring efficient power management. With a voltage rating of 100V and a continuous current capability of up to 27A, it is suitable for various power switching and amplification tasks. This MOSFET features low on-resistance (Rds(on)), which minimizes conduction losses and enhances thermal performance, making it ideal for use in power supplies, motor drives, and high-speed switching applications.
Key specifications include a maximum gate-source voltage of ±20V and a fast switching speed, which contribute to improved efficiency in electronic designs. The device is housed in a TO-220 package, providing good thermal dissipation. Its robust construction and reliability make it a popular choice among engineers in the fields of automotive, industrial, and consumer electronics. Overall, the ISC027N10NM6ATMA1 is a versatile component that supports innovative designs in power electronics.

Features

The ISC027N10NM6ATMA1 is a high-performance N-channel MOSFET designed for power management applications. Key features include:
1. Voltage Rating: It can handle a maximum drain-source voltage (V_DS) of 100V.
2. Continuous Drain Current: It supports a continuous drain current (I_D) of up to 27A, making it suitable for high-power applications.
3. Low On-Resistance: The device has a low on-resistance (R_DS(on)), typically around 27 mΩ, which enhances efficiency by reducing power losses.
4. Fast Switching Speed: Its design allows for rapid switching, improving the performance in high-frequency applications.
5. Thermal Performance: It features a robust thermal management capability, with a high maximum junction temperature (T_j) of 175°C.
6. TO-220 Package: The MOSFET is housed in a TO-220 package, providing good thermal dissipation and ease of mounting.
These features make the ISC027N10NM6ATMA1 ideal for applications such as DC-DC converters, motor drivers, and power supplies.

Package

The ISC027N10NM6ATMA1 is packaged in a DPAK (TO-252) format. This package type is designed for surface mounting and is commonly used in power applications due to its efficient thermal performance and compact size.

Pinout

The ISC027N10NM6ATMA1 is an N-channel MOSFET with a pin count of 4. Its primary functions include acting as a switch or amplifier in electronic circuits. The pins are typically configured as follows:
1. Gate (G): Controls the MOSFET's operation (turns it on or off).
2. Drain (D): The output terminal where current flows out when the device is on.
3. Source (S): The terminal through which current enters the device.
4. Body Diode: Internal diode that allows current to flow in the reverse direction, providing protection in certain applications.
This MOSFET is designed for high-voltage applications, with a maximum drain-source voltage (V_DS) of 100V and a continuous drain current (I_D) of 27A, making it suitable for power management applications.

Manufacturer

The ISC027N10NM6ATMA1 is manufactured by Infineon Technologies AG. Infineon is a global semiconductor manufacturer headquartered in Germany, specializing in the design and production of a wide range of semiconductor solutions. The company focuses on various sectors, including automotive, industrial power control, and digital security. Infineon is known for its innovation in power semiconductors, microcontrollers, and sensors, playing a crucial role in applications such as electric vehicles, renewable energy, and smart devices.

Application

The ISC027N10NM6ATMA1 is a N-channel MOSFET primarily used in power management applications. Its key application areas include DC-DC converters, motor drives, and power switches in industrial and consumer electronics. It is suitable for high-efficiency power supplies, renewable energy systems, and automotive applications due to its low on-resistance and high-speed switching capabilities.

Equivalent

The ISC027N10NM6ATMA1 is a MOSFET typically used in power applications. Equivalent products include:
1. IRF2010
2. STP10NM60
3. FQP10N60
4. BSS140
Check specific datasheets for exact specifications, as parameters like voltage, current, and on-resistance may differ.

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UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

EMS: Versandkosten reichen von $30-$50 (0.5kg), mit einer geschätzten Lieferzeit von 7-15 Werktagen.

Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.

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