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IXDN602SIATR
IC GATE DRVR LOW-SIDE 8SOIC
- Hersteller
- Fr. Teil #IXDN602SIATR
- Paket 8-SOIC
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Spezifikationen
| Package | Tape & Reel (TR),Cut Tape (CT) |
| ProductStatus | Active |
| DrivenConfiguration | Low-Side |
| ChannelType | Independent |
| NumberofDrivers | 2 |
| GateType | IGBT, N-Channel, P-Channel MOSFET |
| Voltage-Supply | 4.5V ~ 35V |
| LogicVoltage-VILVIH | 0.8V, 3V |
| Current-PeakOutput(SourceSink) | 2A, 2A |
| InputType | Non-Inverting |
| Rise/FallTime(Typ) | 7.5ns, 6.5ns |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 8-SOIC (0.154, 3.90mm Width) |
Übersicht
Description
Key features of the IXDN602SIATR include:
- Dual-channel configuration, allowing it to control two separate MOSFETs.
- High peak output current drive capability, often around 2A to 4A.
- Fast switching speeds, which enhance efficiency in power applications.
- Built-in features like under-voltage lockout for safety and reliability.
Understanding the IXDN602SIATR would typically involve studying its electrical characteristics, pin configuration, operating conditions, and application scenarios. If you need detailed information, refer to the official datasheet or technical documentation provided by the manufacturer.
Features
1. High-Speed Performance: Capable of providing high-speed switching with typical rise and fall times of 8 ns.
2. Output Drive Capability: Offers a peak output current of 2A, enabling the efficient driving of large MOSFETs and IGBTs.
3. Low Propagation Delay: Features a propagation delay of approximately 25 ns, which contributes to faster switching.
4. Wide Operating Voltage Range: Operates over a wide supply voltage range of 4.5V to 25V, providing flexibility for different applications.
5. Low Supply Current: Consumes minimal power with a typical supply current of 450 µA.
6. Inverting and Non-Inverting Inputs: Equipped with both inverting and non-inverting inputs, allowing for design flexibility.
7. Robust Design: The device is characterized by a rugged design suitable for use in harsh environments.
8. Thermal Protection: Built-in thermal protection to prevent overheating and ensure reliability.
These features make it suitable for applications in power supply circuits, motor controllers, and other situations requiring efficient high-speed switching of MOSFETs and IGBTs.
Package
Pinout
The primary function of the IXDN602SIATR is to act as a buffer stage between the PWM (Pulse Width Modulation) control signals from a microcontroller or signal processor and the gate of a MOSFET or IGBT. This ensures rapid switching and minimizes power loss, which is essential in applications such as power converters, motor drives, and other high-speed switching environments.
In summary, the IXDN602SIATR has an 8-pin configuration with functions that include power supply connections, input signal pins for each driver channel, and output pins for driving the gates of power MOSFETs or IGBTs.
Manufacturer
Application
Equivalent
Versand
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Versandgebührenreferenz (DHL/FedEx):
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Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.
Zahlungen
Payment Methods
Die Zahlungsfrist ist 100% Prepaid.
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