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IXFB80N50Q2
MOSFET N-CH 500V 80A PLUS264
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Spezifikationen
| Package | Tube |
| Series | HiPerFET™, Q2 Class |
| ProductStatus | Not For New Designs |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 500 V |
| Current-ContinuousDrain(Id)@25°C | 80A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 60mOhm @ 500mA, 10V |
| Vgs(th)(Max)@Id | 5.5V @ 8mA |
| GateCharge(Qg)(Max)@Vgs | 250 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 15000 pF @ 25 V |
| PowerDissipation(Max) | 960W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | PLUS264™ |
Übersicht
Description
This MOSFET is built using advanced trench technology, which enhances its efficiency and reduces on-state resistance (R_DS(on)), allowing for lower conduction losses. The IXFB80N50Q2 also boasts fast switching speeds, which improve overall system performance and efficiency, particularly in high-frequency applications.
The device is packaged in a TO-220 housing, facilitating easy heat dissipation and mounting in various circuit designs. Additionally, it offers good thermal performance and is designed to withstand harsh environmental conditions.
Overall, the IXFB80N50Q2 is an excellent choice for engineers looking for reliable and efficient solutions in power electronics applications.
Features
1. Voltage Rating: It supports a maximum drain-source voltage (V_DS) of 500V, suitable for high-voltage applications.
2. Current Rating: The device can handle a continuous drain current (I_D) of up to 80A, making it ideal for power switching.
3. On-Resistance: It has a low on-resistance (R_DS(on)) of approximately 0.13Ω, which reduces conduction losses and improves efficiency.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 2V to 4V, allowing for efficient driving.
5. Thermal Management: The package is designed for effective heat dissipation, with a maximum junction temperature of 150°C.
6. Fast Switching: The MOSFET features fast switching capabilities, which enhances performance in PWM and other high-frequency applications.
These characteristics make the IXFB80N50Q2 suitable for use in power supplies, motor drives, and industrial automation systems.
Package
Pinout
The pin functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to this pin turns the device on or off.
2. Drain (D): This pin is the output where the load is connected. It allows current to flow from the drain to the source when the MOSFET is on.
3. Source (S): This pin is connected to the ground or the negative side of the power supply, serving as the reference point for the drain current.
The IXFB80N50Q2 is rated for a maximum V_DS of 500V and can handle continuous currents up to 80A, making it suitable for various power switching applications.
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Zahlungen
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Die Zahlungsfrist ist 100% Prepaid.
Derzeit akzeptieren wir nur die folgenden Zahlungsmethoden:
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