IXFH12N120P

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IXFH12N120P

MOSFET N-CH 1200V 12A TO247AD

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  • Fr. Teil #IXFH12N120P
  • Paket TO-247-3
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Spezifikationen

Package Tube
Series HiPerFET™, Polar
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 1200 V
Current-ContinuousDrain(Id)@25°C 12A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 1.35Ohm @ 500mA, 10V
Vgs(th)(Max)@Id 6.5V @ 1mA
GateCharge(Qg)(Max)@Vgs 103 nC @ 10 V
Vgs(Max) ±30V
InputCapacitance(Ciss)(Max)@Vds 5400 pF @ 25 V
PowerDissipation(Max) 543W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-247AD (IXFH)

Übersicht

Description

The IXFH12N120P is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-voltage applications. It features a maximum drain-source voltage (Vds) of 120V and a maximum continuous drain current (Id) of 12A. This device is suitable for power management in applications such as switching power supplies, motor drives, and industrial automation.
Key specifications include a low on-resistance (Rds(on)), which minimizes power loss during operation, and a fast switching speed that enhances efficiency. The IXFH12N120P is housed in a TO-220 package, facilitating heat dissipation and easing integration into circuit designs.
With a high input impedance, it offers low drive power requirements, making it efficient in control circuits. Overall, the IXFH12N120P is a robust choice for engineers seeking reliable performance in high-voltage and high-current applications.

Features

The IXFH12N120P is an N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 120V, making it suitable for high-voltage applications.
2. Current Rating: It can handle continuous drain current (I_D) of up to 12A, providing efficient power handling.
3. Low On-Resistance: It offers a low R_DS(on), typically around 0.15 ohms, which reduces power losses during operation.
4. Fast Switching: Designed for high-speed switching applications, facilitating faster operation in power management circuits.
5. Thermal Performance: The device features a TO-220 package, ensuring effective heat dissipation.
6. Safe Operating Area: It is capable of operating within a safe area (SOA) for both linear and switching applications.
Overall, the IXFH12N120P is ideal for use in power supplies, motor drives, and various switching applications, delivering reliability and performance.

Package

The IXFH12N120P is packaged in a TO-247 format. This package type is designed for high-power applications, offering good thermal performance and ease of mounting.

Pinout

The IXFH12N120P is a high-voltage N-channel MOSFET designed for power applications. It features a TO-220 package, which has a total of three pins.
Pin Configuration:
1. Gate (G) - This pin is used to control the MOSFET. A positive voltage applied to the gate allows the device to conduct.
2. Drain (D) - The drain pin connects to the load. The current flows from the drain to the source when the MOSFET is turned on.
3. Source (S) - The source pin is connected to the ground or the lower potential side of the circuit.
Key Specifications:
- Voltage rating: 1200V
- Current rating: 12A
- RDS(on): Low on-resistance for efficient operation
This device is commonly used in power conversion applications, including switch-mode power supplies and motor drives.

Manufacturer

The IXFH12N120P is manufactured by IXYS Corporation, which is a part of Lattice Semiconductor Corporation as of 2020. IXYS specializes in high-performance power semiconductors and integrated circuits. The company focuses on providing innovative solutions for a wide range of applications, including industrial, automotive, telecommunications, and renewable energy systems. IXYS is known for its expertise in high voltage, high frequency, and high-temperature technologies, making it a key player in the semiconductor industry.

Application

The IXFH12N120P is a high-voltage, N-channel MOSFET used in various applications, including switch-mode power supplies, motor drivers, and industrial power circuits. Its high voltage rating makes it suitable for applications in renewable energy systems, such as solar inverters, as well as in automotive and electric vehicle systems for power conversion and control. Additionally, it can be utilized in high-frequency applications and for general-purpose switching tasks in electronic devices.

Equivalent

The IXFH12N120P is an IGBT (Insulated Gate Bipolar Transistor) used for high-power applications. Equivalent products include the MPSU01, IRG4PC40KD, and FGA25N120. Always verify specifications such as voltage rating, current rating, and switching characteristics when seeking equivalents.

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