IXFH34N65X2

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IXFH34N65X2

MOSFET N-CH 650V 34A TO247

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  • Fr. Teil #IXFH34N65X2
  • Paket TO-247-3
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  • Auf Lager5176

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Spezifikationen

Package Tube
Series HiPerFET™, Ultra X2
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 650 V
Current-ContinuousDrain(Id)@25°C 34A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 105mOhm @ 17A, 10V
Vgs(th)(Max)@Id 5.5V @ 2.5mA
GateCharge(Qg)(Max)@Vgs 56 nC @ 10 V
Vgs(Max) ±30V
InputCapacitance(Ciss)(Max)@Vds 3330 pF @ 25 V
PowerDissipation(Max) 540W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-247 (IXTH)

Übersicht

Description

The IXFH34N65X2 is a high-voltage N-channel MOSFET designed for power electronics applications. It features a maximum drain-source voltage (V_DS) of 650V, a continuous drain current (I_D) of 34A, and a low on-resistance (R_DS(on)) that enables efficient energy conversion and switching. This MOSFET is typically used in applications such as power supplies, motor drives, and inverters due to its enhanced performance characteristics, including fast switching speeds and robust thermal management.
The device is housed in a TO-220 package, allowing for effective heat dissipation, essential in high-power applications. The IXFH34N65X2 is suitable for both switching and linear applications, providing flexibility in design choices. Its gate threshold voltage (V_GS(th)) ensures compatibility with standard drive voltages.
Overall, the IXFH34N65X2 is an excellent choice for engineers seeking reliability and efficiency in high-voltage power circuits.

Features

The IXFH34N65X2 is an N-channel MOSFET designed for high-voltage applications. Key features include:
- Voltage Rating: It can handle a maximum drain-source voltage (V_DS) of 650V, making it suitable for high-voltage circuits.
- Current Rating: It has a continuous drain current (I_D) rating of 34A, allowing it to manage significant loads.
- R_DS(on): It offers a low on-resistance (R_DS(on)) of approximately 0.26 ohms at a gate-source voltage (V_GS) of 10V, which helps in reducing power loss during operation.
- Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is typically between 2V and 4V, enabling efficient switching.
- Package Type: Available in a TO-220 package, facilitating easy heat dissipation and mounting.
- Fast Switching Speed: Optimized for fast switching, suitable for applications like power supplies and motor controls.
- Thermal Resistance: Low thermal resistance enhances performance in high-temperature environments.
These features make the IXFH34N65X2 a reliable choice for various power electronics applications.

Package

The IXFH34N65X2 is packaged in a TO-247 format. This package type is designed for high-power applications, providing good thermal performance and ease of heat dissipation.

Pinout

The IXFH34N65X2 is a N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) with a total of 4 pins. Here are the pin functions:
1. Gate (G): This pin controls the MOSFET operation; applying a voltage to the gate allows current to flow between the drain and source.
2. Drain (D): This is the terminal where the current exits the device when it is in the 'on' state. It connects to the load.
3. Source (S): This terminal is where the current enters the device. It is typically connected to ground or the lower potential in the circuit.
4. Body Diode (intrinsic): While not a separate pin, the IXFH34N65X2 includes a body diode that allows current to flow from the source to the drain when the MOSFET is off, providing protection in certain applications.
This device is commonly used in power management and switching applications due to its high voltage rating and efficient performance.

Manufacturer

The IXFH34N65X2 is manufactured by IXYS Corporation, which is a subsidiary of Littelfuse, Inc. IXYS specializes in semiconductor devices and integrated circuits, particularly in the areas of power management and high-performance applications. The company is known for its expertise in power MOSFETs, IGBTs, and diode technologies, serving various industries including automotive, industrial, and telecommunications. Littelfuse, the parent company, focuses on circuit protection, sensing, and control solutions. Overall, IXYS Corporation is recognized for its innovative semiconductor solutions that cater to high-voltage and high-current applications.

Application

The IXFH34N65X2 is a high-voltage N-channel MOSFET primarily used in power conversion applications. Its application areas include switch-mode power supplies (SMPS), motor drives, and inverters for renewable energy systems. It is also suitable for industrial automation, LED drivers, and consumer electronics where efficient power management and high-speed switching are required.

Equivalent

The IXFH34N65X2 is an N-channel MOSFET known for high voltage and current handling. Equivalent products include the STP34NM65, IRF34N65, and FQA34N65. Always check the datasheets for specific parameters like RDS(on), VDS, and current ratings to ensure compatibility in your application.

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