IXFN320N17T2

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IXFN320N17T2

MOSFET N-CH 170V 260A SOT227B

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  • Fr. Teil #IXFN320N17T2
  • Paket SOT-227-4
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  • Auf Lager2078

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Spezifikationen

Package Tube
Series HiPerFET™, TrenchT2™
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 170 V
Current-ContinuousDrain(Id)@25°C 260A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 5.2mOhm @ 60A, 10V
Vgs(th)(Max)@Id 5V @ 8mA
GateCharge(Qg)(Max)@Vgs 640 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 45000 pF @ 25 V
PowerDissipation(Max) 1070W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Chassis Mount
SupplierDevicePackage SOT-227B

Übersicht

Description

The IXFN320N17T2 is a high-performance N-channel MOSFET designed for power electronics applications. It features a maximum drain-source voltage (V_DS) of 1700V and a continuous drain current (I_D) of 320A, making it suitable for high-voltage and high-current applications. The device offers low on-resistance (R_DS(on)), which improves efficiency by reducing power loss during operation.
This MOSFET is commonly used in applications such as power supplies, motor drives, and renewable energy systems like solar inverters. Its fast switching capabilities enable efficient operation at high frequencies. The IXFN320N17T2 is housed in a robust package that enhances thermal performance, allowing for efficient heat dissipation.
Key specifications include a gate threshold voltage (V_GS(th)) typically between 2V to 4V, and a total gate charge (Q_g) that allows for rapid switching. Overall, the IXFN320N17T2 is a versatile and reliable choice for engineers looking to design high-efficiency power circuits.

Features

The IXFN320N17T2 is an N-channel MOSFET from IXYS, designed for high-frequency and high-efficiency applications. Key features include:
1. Voltage Rating: It has a high breakdown voltage of 1700V, making it suitable for power supply circuits and industrial applications.
2. Current Rating: The device supports a continuous drain current of 320A, providing robust performance in demanding conditions.
3. Low On-Resistance: With a low R_DS(on) value, typically around 0.11Ω, it ensures reduced conduction losses, enhancing overall efficiency.
4. Fast Switching Speed: It offers excellent switching characteristics, allowing for rapid turn-on and turn-off, which is critical in high-frequency applications.
5. Thermal Performance: The package design aids in effective heat dissipation, making it reliable in high-temperature environments.
Overall, the IXFN320N17T2 is ideal for use in renewable energy systems, motor drives, and industrial power applications where high voltage and current handling are crucial.

Package

The IXFN320N17T2 is packaged in a TO-247 format, which is a surface-mounted package designed for high-power applications. This package type allows for efficient heat dissipation and robust electrical performance, making it suitable for power switching applications.

Pinout

The IXFN320N17T2 is an N-channel MOSFET designed for high-performance applications. It has a total of 3 pins. The pinout configuration is as follows:
1. Gate (G): This pin is used to control the MOSFET's operation by applying a voltage. It allows the device to switch on (conduct) or off (non-conduct) based on the gate voltage relative to the source.
2. Drain (D): This pin is where the load is connected. The current flows from the drain to the source when the MOSFET is in the on state.
3. Source (S): This pin is connected to the ground (or negative side of the power supply) in most applications. It serves as the reference point for the gate voltage.
The IXFN320N17T2 is rated for a maximum drain-source voltage (V_DS) of 170V and a continuous drain current (I_D) of 320A, making it suitable for various power switching applications.

Manufacturer

The IXFN320N17T2 is manufactured by IXYS Corporation, a subsidiary of Littelfuse, Inc. IXYS specializes in high-performance power semiconductors and integrated circuits, particularly for applications in power management, industrial, automotive, and renewable energy sectors. The company is known for its innovation in MOSFETs, IGBTs, diodes, and other semiconductor devices. Littelfuse, its parent company, focuses on circuit protection, power control, and sensing products, serving a wide range of industries including automotive, electronics, and energy.

Application

The IXFN320N17T2 is a high-performance N-channel MOSFET primarily used in power electronics applications. It is suitable for use in DC-DC converters, power supplies, motor drives, inverters, and discrete power switching applications. Its high voltage rating and low on-resistance make it ideal for industrial, automotive, and renewable energy systems.

Equivalent

The IXFN320N17T2 is an N-channel MOSFET. Equivalent products include the IRF320, STP320N17, and FQD32N17. Ensure to check specifications like RDS(on), VDS, and current ratings for compatibility with your specific application. Always consult the datasheets for detailed comparisons.

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