IXFN60N80P

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IXFN60N80P

MOSFET N-CH 800V 53A SOT-227B

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Spezifikationen

Supplier IXYS
Package Tube
Series HiPerFET™, Polar
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 800 V
Current-ContinuousDrain(Id)@25°C 53A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 140mOhm @ 30A, 10V
Vgs(th)(Max)@Id 5V @ 8mA
GateCharge(Qg)(Max)@Vgs 250 nC @ 10 V
Vgs(Max) ±30V
InputCapacitance(Ciss)(Max)@Vds 18000 pF @ 25 V
PowerDissipation(Max) 1040W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Chassis Mount
SupplierDevicePackage SOT-227B

Übersicht

Description

The IXFN60N80P is a high-performance N-channel MOSFET designed for various power applications. With a voltage rating of 600V and a continuous drain current capability of 60A, it is suitable for use in switching power supplies, motor drives, and other high-voltage circuits.
Key features include a low on-resistance (R_DS(on)), which minimizes conduction losses, and a fast switching speed that enhances efficiency in high-frequency applications. The device also boasts a robust thermal performance, enabled by its TO-220 package, allowing for effective heat dissipation.
The IXFN60N80P is particularly valued in applications requiring high reliability and efficiency, making it an ideal choice for industrial, automotive, and renewable energy systems. Its gate threshold voltage ranges from 2V to 4V, facilitating simpler driving requirements. Overall, this MOSFET is a versatile component for engineers seeking reliable performance in demanding electronic designs.

Features

The IXFN60N80P is an N-channel MOSFET designed for high-performance switching applications. Key features include:
1. Voltage Rating: Supports a maximum drain-source voltage (V_DS) of 800V, making it suitable for high-voltage applications.
2. Current Rating: Capable of handling a continuous drain current (I_D) of up to 60A, allowing for efficient power management.
3. R_DS(on): Offers low on-resistance (typically around 0.18 ohms), which minimizes power loss and improves efficiency during operation.
4. Gate Threshold Voltage: Features a gate threshold voltage (V_GS(th)) range of 2V to 4V, ensuring compatibility with standard gate drive voltages.
5. Switching Speed: Supports fast switching characteristics, making it ideal for applications in power supplies and inverters.
6. Package: Available in a TO-247 package, which aids in thermal dissipation.
These attributes make the IXFN60N80P suitable for use in various applications, including automotive, industrial, and renewable energy systems.

Package

The IXFN60N80P is typically packaged in a TO-220 form factor, which is a popular package type for power MOSFETs, providing good thermal performance and ease of mounting.

Pinout

The IXFN60N80P is a power MOSFET with a total of 3 pins. The pin configuration and their functions are as follows:
1. Gate (G): This pin controls the MOSFET's switching. A voltage applied here turns the device on or off.
2. Drain (D): This is the terminal through which the current flows into the MOSFET when it is in the on state. It connects to the load.
3. Source (S): This pin serves as the return path for the current. It connects to ground or the negative side of the power supply.
The IXFN60N80P is designed for high-voltage applications, rated for 600V and capable of handling high current levels, making it suitable for various power electronics applications.

Manufacturer

The IXFN60N80P is manufactured by IXYS Corporation, a member of the Littelfuse family of companies. IXYS specializes in the design and production of power semiconductor devices, including MOSFETs, IGBTs, and other related products. The company is known for its innovation in high-performance power management solutions for various applications, including industrial, automotive, and renewable energy sectors. IXYS focuses on providing efficient, reliable components that enhance energy efficiency and performance in electronic systems.

Application

The IXFN60N80P is an N-channel MOSFET used in various applications, including power supplies, motor drives, and industrial equipment. Its high voltage rating (800V) and low on-resistance make it suitable for switching applications in renewable energy systems, such as solar inverters, and in high-voltage power converters. Additionally, it can be utilized in automotive electronics and UPS (Uninterruptible Power Supplies) for efficient power management and control.

Equivalent

The IXFN60N80P is a high-voltage N-channel MOSFET with a 600V rating and a 60A current capacity. Equivalent products include the STP60NF80, IRF840, and FQD60N80. It's important to check specific parameters like R_DS(on), gate threshold voltage, and package type to ensure compatibility in your application.

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