IXFP34N65X2

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IXFP34N65X2

MOSFET N-CH 650V 34A TO220AB

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Spezifikationen

Supplier IXYS
Package Tube
Series HiPerFET™, Ultra X2
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 650 V
Current-ContinuousDrain(Id)@25°C 34A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 105mOhm @ 17A, 10V
Vgs(th)(Max)@Id 5.5V @ 2.5mA
GateCharge(Qg)(Max)@Vgs 56 nC @ 10 V
Vgs(Max) ±30V
InputCapacitance(Ciss)(Max)@Vds 3330 pF @ 25 V
PowerDissipation(Max) 540W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-220-3

Übersicht

Description

IXFP34N65X2 is a dual N-channel enhancement-mode power MOSFET from the IXFP family (originally IXYS/Littelfuse). The “X2” indicates two N‑channel devices in one package, designed for high-voltage switching applications. Each FET is rated for about 650 V and is used as a high‑voltage switch in power supplies, PFC stages, inverters, and motor drives. The device is driven from a gate-source voltage (Vgs) within safety limits (typically up to ±20 V; commonly 10–12 V for full conduction). In a single package you can implement compact half‑bridge or totem‑pole configurations, depending on the pinout and package. Key parameters to check in the datasheet include Vds, Id per FET, Rds(on), total gate charge, switching characteristics, and the safe operating area (SOA). For exact electrical specs, pinout, thermal data, and package details, consult the latest IXFP34N65X2 datasheet.

Features

IXFP34N65X2 appears to be a high‑voltage dual N‑channel power MOSFET in a single X2 package. Typical features (per IXFP family) include:
- VDS: 650 V (high-voltage switch device)
- Dual N‑channel MOSFETs in one package
- Current rating: tens of amps per FET (exact Id per device in datasheet)
- RDS(on): low to moderate (datasheet‑dependent; usually a few tenths to a few ohms)
- Fast switching trench MOSFET technology
- Gate drive: compatible with standard gate voltages (commonly 4.5–10 V)
- Avalanche ruggedness and robust SOA for switching power supplies, PFC, inverters, motor drives
- RoHS compliant and suitable for power‑electronics PCB layouts
Note: exact values (Id, RDS(on), Qg, package pinout) vary by variant. For precise specifications, consult the official datasheet.

Package

The IXFP34N65X2 is a 650 V, 34 A power MOSFET packaged in a TO-247-3 (three-lead) through-hole plastic power package.

Pinout

- Pin count: 6 pins (three on each side).
- Function: Dual N-channel enhancement-mode power MOSFETs in one package (two 650 V, ~34 A devices for high-voltage switching). The tab/drain is typically common to both MOSFETs.

Manufacturer

- Manufacturer: IXYS Corporation (now part of Littelfuse, Inc.).
- What kind of company: A semiconductor company that designs and manufactures power semiconductors, including power MOSFETs, IGBTs, diodes, and related devices for high-voltage/high-current applications.

Equivalent

IXFP34N65X2 equivalents are 650 V, ~30–40 A N‑channel power MOSFETs in the same TO‑247/TO‑247-3 package. Common alternatives: STMicro STW34NM65, Vishay SiHFA/SiHF34N65 series, ON Semiconductor NTP34N65, Infineon/IR 650 V MOSFETs with similar RDS(on)/Qg. Always verify VDS, ID, RDS(on), gate charge, avalanche rating and pinout against the IXFP34N65X2 datasheet before substitution.

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