IXFX420N10T

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IXFX420N10T

MOSFET N-CH 100V 420A PLUS247-3

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Spezifikationen

Supplier IXYS
Package Tube
Series HiPerFET™, Trench
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 100 V
Current-ContinuousDrain(Id)@25°C 420A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 2.6mOhm @ 60A, 10V
Vgs(th)(Max)@Id 5V @ 8mA
GateCharge(Qg)(Max)@Vgs 670 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 47000 pF @ 25 V
PowerDissipation(Max) 1670W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Through Hole
SupplierDevicePackage PLUS247™-3

Übersicht

Description

The IXFX420N10T is a high-performance N-channel power MOSFET designed for various applications, including power management, motor control, and renewable energy systems. With a voltage rating of 100V and a continuous drain current of 420A, this MOSFET is suitable for high-power applications.
Key features include low on-resistance, which minimizes power loss and increases efficiency, and a fast switching speed that enhances overall system performance. It typically offers a low gate charge, making it easier to drive and reducing the energy required during switching operations.
The IXFX420N10T is housed in a robust package, ensuring excellent thermal performance for reliable operation in demanding environments. Its reliability and efficiency make it a popular choice for engineers looking to optimize power electronics designs.
Overall, the IXFX420N10T stands out in the power semiconductor market for its combination of high power handling capabilities and efficiency, making it ideal for both industrial and consumer applications.

Features

The IXFX420N10T is a high-performance N-channel MOSFET designed for various applications, particularly in power management and switching circuits. Key features include:
1. Voltage Rating: Capable of withstanding a maximum drain-source voltage (Vds) of 100V.
2. Current Rating: Supports continuous drain current (Id) up to 420A, making it suitable for high-current applications.
3. Low On-Resistance: Offers a low RDS(on) value, which reduces conduction losses and improves efficiency.
4. Fast Switching Speed: Designed for rapid switching, facilitating efficient operation in high-frequency applications.
5. Thermal Management: Features a robust package that aids in effective heat dissipation, ensuring reliable performance under high loads.
6. Gate Threshold Voltage: Provides a favorable gate threshold voltage for easy driving by standard logic levels.
These features make the IXFX420N10T ideal for use in applications such as power supplies, motor drives, and other demanding electronic circuits.

Package

The IXFX420N10T is typically packaged in a TO-220 format, which is designed for efficient heat dissipation and ease of mounting on heatsinks in power applications.

Pinout

The IXFX420N10T is an N-channel MOSFET with a total of 5 pins. The pin configuration is as follows:
1. Gate (G) - Controls the MOSFET's switching.
2. Drain (D) - The output terminal where the load is connected.
3. Source (S) - The terminal connected to ground or the negative side of the circuit.
The IXFX420N10T is designed for high efficiency and can handle high voltage and current, making it suitable for applications like power management and motor control. Its specifications include a maximum continuous drain current and a low on-resistance, enhancing its performance in switching applications.

Manufacturer

The IXFX420N10T is manufactured by IXYS Corporation, which is a subsidiary of Lattice Semiconductor. IXYS specializes in power management, analog, and digital integrated circuits. The company is known for its expertise in high-performance semiconductor solutions, particularly for applications in power electronics, industrial automation, and renewable energy systems. IXYS designs and manufactures a range of products, including MOSFETs, IGBTs, and other power semiconductors, catering to various sectors such as automotive, telecommunications, and consumer electronics. The company's innovative technologies aim to enhance efficiency and reliability in electronic designs.

Application

The IXFX420N10T is an N-channel MOSFET designed for high-efficiency power conversion applications. Its primary application areas include DC-DC converters, power supplies, motor drives, and electric vehicles. It is suitable for use in industrial and consumer electronics, where efficient switching and thermal management are essential. Its low on-resistance and high-speed switching capabilities make it ideal for applications requiring high power density and energy efficiency.

Equivalent

The IXFX420N10T is a 100V, 420A N-channel MOSFET. Equivalent products include the Infineon IPP420N10N3, STMicroelectronics STP420N10, and Vishay SiHP420N10. Always check specifications for exact compatibility, including R_DS(on), gate charge, and thermal performance before substitution.

Versand

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Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.

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