IXFX44N80P

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IXFX44N80P

MOSFET N-CH 800V 44A PLUS247-3

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Spezifikationen

Supplier IXYS
Package Tube
Series HiPerFET™, Polar
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 800 V
Current-ContinuousDrain(Id)@25°C 44A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 190mOhm @ 22A, 10V
Vgs(th)(Max)@Id 5V @ 8mA
GateCharge(Qg)(Max)@Vgs 198 nC @ 10 V
Vgs(Max) ±30V
InputCapacitance(Ciss)(Max)@Vds 12000 pF @ 25 V
PowerDissipation(Max) 1040W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Through Hole
SupplierDevicePackage PLUS247™-3

Übersicht

Description

IXFX44N80P is a high‑voltage N‑channel MOSFET from the IXFX family (IXYS/Littelfuse). It’s intended for switching power electronics in very high-voltage apps. Key points:
- VDS around 800 V; ID in the tens of amps range (exact value depends on variant)
- Low RDS(on) for efficient conduction; rugged SOA and avalanche capability
- Gate drive typically 10–12 V for full conduction (not guaranteed as logic‑level)
- Includes intrinsic body diode
- Used in offline power supplies, PFC, DC‑DC converters, motor drives, etc.
- Common packages: TO‑220AB or D²PAK; RoHS variants available
For precise specs (VDS, ID, RDS(on), Qg, packaging, SOA) consult the specific datasheet for your variant, as exact numbers vary by revision and package.

Features

Here are the typical features of IXFX44N80P (high-voltage N-channel power MOSFET; check the datasheet for exact numbers):
- N-channel enhancement-mode power MOSFET
- High-voltage rating (around 800 V)
- Continuous drain current in the tens of amps range (approx. 44 A class per the part number)
- Low to moderate on-resistance for a HV device
- Gate drive: Vgs(th) typically 2–4 V; 10 V drive commonly recommended
- Fast switching capability with relatively low gate charge
- Robust avalanche-energy capability for inductive switching
- Rugged, intrinsic body diode; suitable for high-speed switching
- Pb-free, RoHS compliant
- Packaging options typically include common HV through-hole and surface-mount power packages
- Applications: switch-mode power supplies, motor drives, inverters, solar/inverter topologies, industrial power electronics
Note: Exact values (Vds, Id, Rds(on), Qg, EAS) vary by package/version. Refer to the specific datasheet for precise specifications.

Package

TO-220AB (through-hole) package.

Pinout

IXFX44N80P is a 3‑terminal N‑channel power MOSFET (with an additional metal mounting tab). Pins/functions:
- Pin 1: Gate (G) – control input
- Pin 2: Drain (D) – main high‑voltage terminal
- Pin 3: Source (S) – return/reference
- Mounting tab: electrically tied to Drain (used for heatsinking)
Function: high‑voltage N‑channel enhancement MOSFET used as a switching device (power switching, PWM, inverter, clamp, etc.).

Manufacturer

Manufacturer: IXYS Corporation (now part of Littelfuse; IXYS was acquired by Littelfuse in 2018).
What kind of company: IXYS is/was a semiconductor company specializing in power and analog semiconductor devices—power MOSFETs, IGBTs, diodes, power ICs and RF/power electronics for power conversion and industrial, automotive and consumer applications.

Application

IXFX44N80P is a high-voltage, high-current N-channel MOSFET. Typical applications: offline switch-mode power supplies and PFC stages, DC-DC converters, solar inverters, UPS systems, motor/servo drives, and other high-voltage switching power electronics in industrial and telecom equipment.

Equivalent

I can’t reliably list direct equivalents without the IXFX44N80P datasheet. To find matches, compare VDS (800 V), continuous drain current, RDS(on), package and total gate charge. Typical alternatives to consider are 800 V N‑channel power MOSFETs from Infineon (CoolMOS), STMicro (e.g., STW series), ON Semiconductor and ROHM—but you must verify spec‑for‑spec. Upload the IXFX44N80P datasheet or its key specs and I’ll provide exact cross‑references.

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