IXGT6N170A

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IXGT6N170A

IGBT 1700V 6A 75W TO268

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Spezifikationen

Package Tube
ProductStatus Active
IGBTType NPT
Voltage-CollectorEmitterBreakdown(Max) 1700 V
Current-Collector(Ic)(Max) 6 A
Current-CollectorPulsed(Icm) 14 A
Vce(on)(Max)@VgeIc 7V @ 15V, 3A
Power-Max 75 W
SwitchingEnergy 590µJ (on), 180µJ (off)
InputType Standard
GateCharge 18.5 nC
Td(on/off)@25°C 46ns/220ns
TestCondition 850V, 6A, 33Ohm, 15V
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
Package/Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

Übersicht

Description

The IXGT6N170A is a high-performance insulated gate bipolar transistor (IGBT) designed for power electronics applications. It combines the benefits of MOSFETs and bipolar transistors, offering high efficiency and fast switching capabilities. With a voltage rating of 1700V and a current rating of 6A, it is suitable for various applications such as motor drives, induction heating, and power inverters.
The device features low on-state voltage drop and minimal switching losses, which enhance overall system efficiency. Its robust construction allows for high-temperature operation, making it ideal for demanding environments. The IXGT6N170A is designed for easy integration into circuit designs, with a gate drive voltage compatible with standard logic levels.
Overall, this IGBT is a reliable choice for engineers looking to optimize performance in high-voltage and high-current applications.

Features

The IXGT6N170A is a high-performance insulated gate bipolar transistor (IGBT) designed for power electronics applications. Key features include:
1. Voltage Rating: 1700V, suitable for high-voltage applications.
2. Current Rating: 6A continuous collector current, allowing for efficient power handling.
3. Low On-State Voltage: Reduces power loss during operation.
4. Fast Switching Speed: Enhances efficiency in switching applications.
5. Low Gate Drive Power: Simplifies driver circuitry and reduces overall system power consumption.
6. Thermal Stability: Designed to handle high temperatures, improving reliability in demanding environments.
7. Short Circuit Capability: Provides protection against transient faults, increasing robustness.
These features make the IXGT6N170A ideal for use in power inverters, motor drives, and other industrial applications requiring effective energy conversion and control.

Package

The IXGT6N170A is a high-power MOSFET packaged in a TO-247 format. This package features a robust construction suitable for high-voltage applications, providing efficient heat dissipation and excellent electrical performance.

Pinout

The IXGT6N170A is an insulated gate bipolar transistor (IGBT) designed for high-power applications. It features a total of 4 pins. The pin configuration and their functions are as follows:
1. Gate (G): This pin controls the transistor's switching operation and allows for the application of a voltage to turn the device on and off.
2. Collector (C): The collector pin is connected to the load and is where the current flows out of the IGBT when it is in the 'on' state.
3. Emitter (E): The emitter pin is connected to the ground or the return path of the circuit, allowing current to flow into the IGBT when it is activated.
4. Thermal Pad (T): While not a pin in the traditional sense, the thermal pad is used for heat dissipation and mounting purposes.
The IXGT6N170A is rated for a maximum voltage of 1700V and a continuous collector current of 6A, making it suitable for applications like motor drives and power converters.

Manufacturer

The IXGT6N170A is manufactured by IXYS Corporation, which is a subsidiary of Littelfuse, Inc. IXYS specializes in power semiconductor products, including MOSFETs, IGBTs, and diodes, primarily catering to industries such as telecommunications, industrial automation, and renewable energy. The company focuses on high-performance electronic components designed for efficient power management and conversion applications. With a strong emphasis on innovation and quality, IXYS serves a global market, providing solutions for various high-voltage and high-current applications.

Application

The IXGT6N170A is an IGBT (Insulated Gate Bipolar Transistor) primarily used in high-power applications such as motor drives, industrial automation, renewable energy systems (like solar inverters), power supplies, and electric vehicles. Its high voltage and current ratings make it suitable for switching and amplification in power conversion and control applications, contributing to efficient energy management in various industrial and commercial sectors.

Equivalent

The IXGT6N170A is a 170V, 6A IGBT (Insulated Gate Bipolar Transistor). Equivalent products include:
1. Infineon IGBT series like BSM60GD170DN2
2. NXP IGBT modules like NGTB6N170
3. Semikron SKM50GB123D
Always verify specifications and applications for compatibility in your project.

Versand

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Versandgebührenreferenz (DHL/FedEx):

DHL: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 2-5 Werktagen.

von FedEx: Versandkosten reichen von $25-$40 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

EMS: Versandkosten reichen von $30-$50 (0.5kg), mit einer geschätzten Lieferzeit von 7-15 Werktagen.

Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.

Zahlungen

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