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IXTH16P60P
MOSFET P-CH 600V 16A TO247
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- Datenblatt IXTH16P60P DataSheet
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Spezifikationen
| Series | PolarP™ |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600 V |
| Current - Continuous Drain (Id) @ 25°C | 16A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 720mOhm @ 500mA, 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 92 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 5120 pF @ 25 V |
| Power Dissipation (Max) | 460W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247 (IXTH) |
| Package / Case | TO-247-3 |
| Base Product Number | IXTH16 |
Übersicht
Description
This IGBT offers low conduction and switching losses, enhancing overall system efficiency. Its fast switching capabilities reduce heat generation, enabling higher operational frequencies. Additionally, the IXTH16P60P includes built-in diode functionality, providing reverse recovery characteristics essential for applications like PWM (Pulse Width Modulation).
The package design typically allows for easy integration into circuit boards, and its robust thermal performance ensures reliable operation in demanding environments. Overall, the IXTH16P60P is ideal for engineers seeking reliable and efficient solutions in power electronics.
Features
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 600V, making it suitable for high-voltage applications.
2. Current Rating: The continuous drain current (Id) is typically around 16A, allowing it to handle significant loads.
3. RDS(on): Low on-resistance (RDS(on)), typically around 0.16 ohms, reducing conduction losses and improving efficiency.
4. Gate Threshold Voltage: The gate-to-source voltage (Vgs(th)) is low, facilitating easier drive requirements.
5. Fast Switching Speed: Designed for quick switching, minimizing switching losses in high-frequency applications.
6. Package Type: Available in a TO-220 package, providing good thermal management and ease of mounting.
7. Thermal Resistance: Low thermal resistance ensures better performance under varying thermal conditions.
These features make the IXTH16P60P suitable for applications in power supplies, inverters, and motor drives.
Package
Pinout
1. Gate (G): Controls the MOSFET's operation; applying a voltage here turns the device on or off.
2. Drain (D): The terminal through which the current flows out of the MOSFET when it is in the 'on' state.
3. Source (S): The terminal through which the current enters the MOSFET.
4. Body Diode (no separate pin): The intrinsic body diode allows current to flow from the drain to the source in the opposite direction when reverse-biased.
The IXTH16P60P is designed for applications requiring efficient switching and handling of high voltages and currents, commonly used in power management and motor control applications.
Manufacturer
Application
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