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IXTH52N65X
MOSFET N-CH 650V 52A TO247
- Hersteller
- Fr. Teil #IXTH52N65X
- Paket TO-247-3
- Datenblatt
- Auf Lager4599
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Spezifikationen
| Package | Tube |
| Series | Ultra X |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 650 V |
| Current-ContinuousDrain(Id)@25°C | 52A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 68mOhm @ 26A, 10V |
| Vgs(th)(Max)@Id | 5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 113 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 4350 pF @ 25 V |
| PowerDissipation(Max) | 660W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-247 (IXTH) |
Übersicht
Description
This MOSFET is characterized by its low on-resistance (R_DS(on)), which minimizes power loss and enhances efficiency in circuits. It also offers fast switching speeds, contributing to improved performance in high-frequency applications. Additionally, the IXTH52N65X is designed with a robust package to handle thermal stress, providing reliable operation in demanding environments.
Overall, the IXTH52N65X serves as an effective component in various configurations, supporting both high-voltage and high-current designs, while ensuring optimal thermal management and energy efficiency.
Features
1. Voltage Rating: Supports a maximum drain-source voltage (V_DS) of 650V, making it suitable for high-voltage applications.
2. Current Rating: Capable of handling a continuous drain current (I_D) of up to 52A, with appropriate heat sinking.
3. Low On-Resistance: Offers a low R_DS(on) of approximately 0.38 ohms, ensuring efficient power conversion and reduced heat generation during operation.
4. Fast Switching: Designed for high-speed switching applications, enhancing efficiency in power supplies and converters.
5. Thermal Performance: Features a TO-247 package that aids in effective heat dissipation, allowing operation at higher temperatures.
6. Gate Threshold Voltage: Has a gate threshold voltage (V_GS(th)) typically around 3-4V, enabling easy drive with low-voltage controllers.
Overall, the IXTH52N65X is ideal for use in applications like motor drives, power inverters, and other high-efficiency power management systems.
Package
Pinout
The pin configuration is as follows:
1. Gate (G): Controls the MOSFET's switching on and off by applying a voltage.
2. Drain (D): The output terminal where the load is connected, allowing current to flow from this pin when the device is turned on.
3. Source (S): Common reference point for the voltage applied to the gate, typically connected to ground in low-side switching applications.
The IXTH52N65X is rated for a maximum drain-source voltage of 650V and a continuous drain current of 52A, making it suitable for use in power supplies, motor drives, and other high-power applications.
Manufacturer
Application
Equivalent
1. STP52N65M2
2. IRF520
3. FQP52N65
4. BUK765R6-40
Always verify specifications such as VDS, ID, RDS(on), and package type for compatibility in your application.
Versand
VersandmethodenWir
bieten Sie globale Versanddienstleistungen durch DHL, FedEx, TNT, UPS oder einen anderen Spediteur Ihrer Wahl.
Versandgebührenreferenz (DHL/FedEx):
DHL: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 2-5 Werktagen.
von FedEx: Versandkosten reichen von $25-$40 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.
UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.
TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.
EMS: Versandkosten reichen von $30-$50 (0.5kg), mit einer geschätzten Lieferzeit von 7-15 Werktagen.
Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.
Zahlungen
Payment Methods
Die Zahlungsfrist ist 100% Prepaid.
Derzeit akzeptieren wir nur die folgenden Zahlungsmethoden:
1. PayPal
2. Kredit- / Debitkarte
3. Überweisung
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