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IXTP160N10T
MOSFET N-CH 100V 160A TO220AB
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Spezifikationen
| Supplier | IXYS |
| Package | Tube |
| Series | Trench |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 100 V |
| Current-ContinuousDrain(Id)@25°C | 160A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 7mOhm @ 25A, 10V |
| Vgs(th)(Max)@Id | 4.5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 132 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 6600 pF @ 25 V |
| PowerDissipation(Max) | 430W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220-3 |
Übersicht
Description
Key specifications include a low on-resistance (R_DS(on)), which minimizes power losses during operation, and a fast switching speed that enhances performance in high-frequency applications. The device is housed in a robust TO-220 package, facilitating efficient heat dissipation and easy mounting on heatsinks.
It is commonly used in applications such as DC-DC converters, inverters, and automotive systems due to its reliability and performance characteristics. The IXTP160N10T is favored by engineers for its efficiency and thermal management capabilities, making it a versatile choice in modern electronic designs.
Features
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 100V, making it suitable for various power management applications.
2. Continuous Drain Current: It can handle a continuous drain current (I_D) of up to 160A, which is beneficial for high-current applications.
3. R_DS(on): This MOSFET boasts a low on-resistance (R_DS(on)) of approximately 10 mΩ at a gate-source voltage (V_GS) of 10V, leading to minimal conduction losses.
4. Package: It is available in a TO-220 package, facilitating efficient heat dissipation and easier mounting.
5. Switching Speed: The device features fast switching capabilities, which is ideal for applications in converters and inverters.
6. Thermal Performance: With a high thermal resistance, it supports better performance in high-temperature environments.
These features make the IXTP160N10T suitable for automotive, industrial, and consumer electronics applications requiring efficient power management.
Package
Pinout
1. Gate (G): This pin is used for controlling the MOSFET. By applying a voltage here, you can turn the device on or off.
2. Drain (D): This pin is where the current flows out of the MOSFET when it is conducting.
3. Source (S): This pin is the input for current to enter the MOSFET when it is turned on.
4. Body Diode (integrated): Provides a path for reverse current, useful in applications such as switching and motor control.
5. Thermal Pad: For heat dissipation, it is not a pin but facilitates better thermal management when mounted on a PCB.
The IXTP160N10T is rated for a maximum drain-source voltage of 100V and a continuous drain current of 160A, making it suitable for high-power applications.
Manufacturer
Application
Equivalent
Versand
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bieten Sie globale Versanddienstleistungen durch DHL, FedEx, TNT, UPS oder einen anderen Spediteur Ihrer Wahl.
Versandgebührenreferenz (DHL/FedEx):
DHL: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 2-5 Werktagen.
von FedEx: Versandkosten reichen von $25-$40 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.
UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.
TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.
EMS: Versandkosten reichen von $30-$50 (0.5kg), mit einer geschätzten Lieferzeit von 7-15 Werktagen.
Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.
Zahlungen
Payment Methods
Die Zahlungsfrist ist 100% Prepaid.
Derzeit akzeptieren wir nur die folgenden Zahlungsmethoden:
1. PayPal
2. Kredit- / Debitkarte
3. Überweisung
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