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IXTP3N120
MOSFET N-CH 1200V 3A TO220AB
- Hersteller
- Fr. Teil #IXTP3N120
- Paket TO-220-3
- Datenblatt
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Spezifikationen
| Package | Tube |
| Series | HiPerFET™ |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 1200 V |
| Current-ContinuousDrain(Id)@25°C | 3A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 4.5Ohm @ 500mA, 10V |
| Vgs(th)(Max)@Id | 5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 42 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 1350 pF @ 25 V |
| PowerDissipation(Max) | 200W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220-3 |
Übersicht
Description
Key characteristics include low on-resistance, which minimizes power loss and heat generation during operation, and fast switching speeds, allowing for efficient performance in high-frequency applications. The device is often used in power supplies, motor control circuits, and automotive applications.
The IXTP3N120 typically comes in a TO-220 or similar package, facilitating effective thermal dissipation. When designing circuits with this MOSFET, considerations around gate drive requirements, thermal management, and switching losses are crucial for optimal performance.
Overall, IXTP3N120 offers reliability and efficiency for engineers looking to implement robust power solutions in their designs.
Features
1. Voltage Rating: It can handle a maximum drain-source voltage (V_DS) of 120V.
2. Current Rating: It supports a continuous drain current (I_D) of up to 3A at a specified temperature.
3. On-Resistance: Low on-resistance (R_DS(on)), typically around 0.5 ohms, which reduces power loss during operation.
4. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) is between 2-4V, facilitating easy drive with low-voltage logic levels.
5. Package Type: It usually comes in a TO-220 or similar package, suitable for efficient heat dissipation.
6. Fast Switching Speed: Designed for quick switching applications, making it ideal for power supplies and motor drives.
7. Thermal Resistance: Good thermal performance ratings, allowing for reliable operation under various conditions.
These features make the IXTP3N120 suitable for applications in power management, automotive, and industrial control systems.
Package
Pinout
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to this pin allows current to flow between the drain and source.
2. Drain (D): This pin is connected to the load and is where the main current flows when the MOSFET is turned on.
3. Source (S): This pin is connected to the ground or negative side of the power supply. It completes the circuit for the current flowing through the MOSFET.
The IXTP3N120 is utilized in various applications, including power supplies, motor drives, and industrial equipment, due to its high voltage and current handling capabilities.
Manufacturer
Application
Equivalent
Versand
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Versandgebührenreferenz (DHL/FedEx):
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von FedEx: Versandkosten reichen von $25-$40 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.
UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.
TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.
EMS: Versandkosten reichen von $30-$50 (0.5kg), mit einer geschätzten Lieferzeit von 7-15 Werktagen.
Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.
Zahlungen
Payment Methods
Die Zahlungsfrist ist 100% Prepaid.
Derzeit akzeptieren wir nur die folgenden Zahlungsmethoden:
1. PayPal
2. Kredit- / Debitkarte
3. Überweisung
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