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IXTQ82N25P
MOSFET N-CH 250V 82A TO3P
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- Fr. Teil #IXTQ82N25P
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Spezifikationen
| Supplier | IXYS |
| Package | Tube |
| Series | Polar |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 250 V |
| Current-ContinuousDrain(Id)@25°C | 82A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 35mOhm @ 41A, 10V |
| Vgs(th)(Max)@Id | 5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 142 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 4800 pF @ 25 V |
| PowerDissipation(Max) | 500W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-3P |
Übersicht
Description
MOSFETs like the IXTQ82N25P are commonly used in various applications, including power supplies, motor drives, and converters, due to their fast switching capabilities and robustness. Its construction allows for efficient heat management, and it typically comes in a standard TO-220 package, facilitating easy integration into electronic designs. Overall, the IXTQ82N25P is a reliable choice for engineers seeking effective solutions for demanding power applications.
Features
1. Voltage Rating: It typically has a maximum drain-source voltage (V_DS) of 250V, making it suitable for high-voltage applications.
2. Current Rating: The device can handle a continuous drain current (I_D) of up to 82A, allowing for high-power handling.
3. Low R_DS(on): It offers a low on-resistance, which minimizes power loss during operation and enhances efficiency.
4. Fast Switching Speed: The device is designed for rapid switching, making it ideal for applications such as power supplies and motor drivers.
5. Package Type: It is usually available in TO-220 or similar packages, facilitating efficient heat dissipation and ease of mounting.
6. Thermal Performance: The MOSFET can operate effectively in a range of temperatures, making it reliable for various environments.
Overall, the IXTQ82N25P is suited for applications requiring high efficiency and performance in power management systems.
Package
Pinout
1. Gate (G): Pin 1 - Controls the switching of the MOSFET.
2. Drain (D): Pin 2 - Connects to the load and carries the current when the device is on.
3. Source (S): Pin 3 - Connects to the ground or the negative side of the power supply.
4. Gate (G): Pin 4 - An additional gate connection for certain configurations.
5. Drain (D): Pin 5 - Another drain connection for improved current handling.
6. Source (S): Pin 6 - An additional source connection for better thermal performance.
7. Drain (D): Pin 7 - Further drain connection for parallel configurations.
8. Source (S): Pin 8 - Another source connection to support high current applications.
This configuration allows for efficient handling of high voltages and currents, making the IXTQ82N25P suitable for various power applications.
Manufacturer
Application
Equivalent
Versand
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Zahlungen
Payment Methods
Die Zahlungsfrist ist 100% Prepaid.
Derzeit akzeptieren wir nur die folgenden Zahlungsmethoden:
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