IXTY1R6N100D2

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IXTY1R6N100D2

MOSFET N-CH 1000V 1.6A TO252

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Spezifikationen

Package Tube
Series Depletion
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 1000 V
Current-ContinuousDrain(Id)@25°C 1.6A (Tc)
RdsOn(Max)@IdVgs 10Ohm @ 800mA, 0V
GateCharge(Qg)(Max)@Vgs 27 nC @ 5 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 645 pF @ 25 V
FETFeature Depletion Mode
PowerDissipation(Max) 100W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage TO-252AA

Übersicht

Description

The IXTY1R6N100D2 is a specific model of an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency power management applications. It is characterized by its low on-resistance, fast switching speeds, and high thermal stability, making it suitable for various applications, including power supplies, motor drives, and other high-current circuits.
Key specifications often include a maximum drain-source voltage (Vds), a maximum continuous drain current (Id), and a low gate threshold voltage (Vgs). The IXTY series is typically designed to handle significant power loads while maintaining efficiency, making it ideal for both consumer electronics and industrial applications.
When selecting a MOSFET like the IXTY1R6N100D2, it's essential to consider parameters such as the application voltage, current requirements, switching frequency, and thermal management to ensure optimal performance. Always refer to the manufacturer's datasheet for detailed specifications and guidelines for proper usage.

Features

The IXTY1R6N100D2 is a high-performance IGBT (Insulated Gate Bipolar Transistor) module designed for various applications, including inverters, converters, and motor drives. Key features include:
1. Voltage Rating: Typically rated for 1200V, suitable for medium voltage applications.
2. Current Rating: Can handle up to 100A, making it suitable for high-power applications.
3. Low Switching Losses: Enhanced efficiency due to optimized design for reduced switching losses.
4. Thermal Performance: Excellent thermal conductivity and heat dissipation capabilities.
5. Fast Switching Speed: Allows for improved efficiency in switching applications.
6. Robust Design: Durable construction for longevity and reliability in demanding environments.
7. Integrated Protection: Often includes built-in features for overcurrent and thermal protection.
8. Compact Size: Space-saving design, facilitating easy integration into various systems.
This IGBT module is ideal for industrial applications requiring reliable and efficient power management.

Package

The IXTY1R6N100D2 is a power MOSFET typically packaged in a TO-220 format. This package type provides good thermal performance and is suitable for various applications, including power management and switching.

Pinout

The IXTY1R6N100D2 is an N-channel MOSFET from IXYS Corporation. It features a TO-220 package with a total of three pins. The pin configuration is as follows:
1. Gate (G): This pin controls the MOSFET and is used to turn it on or off by applying a voltage.
2. Drain (D): This pin is where the load is connected and carries the current when the MOSFET is on.
3. Source (S): This pin is connected to the ground or the negative side of the power supply.
The IXTY1R6N100D2 is designed for high voltage applications, with a maximum drain-source voltage of 100V and a continuous drain current rating of around 1.6A. It offers low on-resistance, making it suitable for various switching applications.

Manufacturer

The IXTY1R6N100D2 is manufactured by IXYS Corporation, which is a part of the Wolfspeed, a Cree company. IXYS specializes in power semiconductors and integrated circuits, focusing on providing high-performance products for various applications, including industrial, automotive, and telecommunications. The company is known for its expertise in power management and control solutions, particularly in the field of high-voltage and high-current applications. IXYS's offerings include a range of devices such as MOSFETs, IGBTs, and diodes. Their products are utilized in diverse sectors, making them a key player in the semiconductor industry.

Application

The IXTY1R6N100D2 is a high-voltage, high-current MOSFET primarily used in applications such as power supplies, motor drives, and industrial automation. It is suitable for switching applications in renewable energy systems, electric vehicles, and power management circuits. Its efficiency and thermal performance make it ideal for use in DC-DC converters and UPS systems.

Equivalent

The IXTY1R6N100D2 is a MOSFET component. Equivalent products include the IRF1010, STP16NF06, and BSS123, among others. Always verify specifications like voltage, current ratings, and package type when selecting an equivalent.

Versand

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TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

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Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.

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