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IXTY1R6N100D2
MOSFET N-CH 1000V 1.6A TO252
- Hersteller
- Fr. Teil #IXTY1R6N100D2
- Paket TO-252-3,DPak(2Leads+Tab),SC-63
- Datenblatt
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Spezifikationen
| Package | Tube |
| Series | Depletion |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 1000 V |
| Current-ContinuousDrain(Id)@25°C | 1.6A (Tc) |
| RdsOn(Max)@IdVgs | 10Ohm @ 800mA, 0V |
| GateCharge(Qg)(Max)@Vgs | 27 nC @ 5 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 645 pF @ 25 V |
| FETFeature | Depletion Mode |
| PowerDissipation(Max) | 100W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | TO-252AA |
Übersicht
Description
Key specifications often include a maximum drain-source voltage (Vds), a maximum continuous drain current (Id), and a low gate threshold voltage (Vgs). The IXTY series is typically designed to handle significant power loads while maintaining efficiency, making it ideal for both consumer electronics and industrial applications.
When selecting a MOSFET like the IXTY1R6N100D2, it's essential to consider parameters such as the application voltage, current requirements, switching frequency, and thermal management to ensure optimal performance. Always refer to the manufacturer's datasheet for detailed specifications and guidelines for proper usage.
Features
1. Voltage Rating: Typically rated for 1200V, suitable for medium voltage applications.
2. Current Rating: Can handle up to 100A, making it suitable for high-power applications.
3. Low Switching Losses: Enhanced efficiency due to optimized design for reduced switching losses.
4. Thermal Performance: Excellent thermal conductivity and heat dissipation capabilities.
5. Fast Switching Speed: Allows for improved efficiency in switching applications.
6. Robust Design: Durable construction for longevity and reliability in demanding environments.
7. Integrated Protection: Often includes built-in features for overcurrent and thermal protection.
8. Compact Size: Space-saving design, facilitating easy integration into various systems.
This IGBT module is ideal for industrial applications requiring reliable and efficient power management.
Package
Pinout
1. Gate (G): This pin controls the MOSFET and is used to turn it on or off by applying a voltage.
2. Drain (D): This pin is where the load is connected and carries the current when the MOSFET is on.
3. Source (S): This pin is connected to the ground or the negative side of the power supply.
The IXTY1R6N100D2 is designed for high voltage applications, with a maximum drain-source voltage of 100V and a continuous drain current rating of around 1.6A. It offers low on-resistance, making it suitable for various switching applications.
Manufacturer
Application
Equivalent
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Zahlungen
Payment Methods
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