JANTX2N3019

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JANTX2N3019

TRANS NPN 80V 1A TO-5

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Spezifikationen

Part Status Active
Transistor Type NPN
Current - Collector (Ic) (Max) 1 A
Voltage - Collector Emitter Breakdown (Max) 80 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 500mA, 10V
Power - Max 800 mW
Operating Temperature -65°C ~ 200°C (TJ)
Mounting Type Through Hole
Package / Case TO-205AA, TO-5-3 Metal Can
Supplier Device Package TO-5
Base Product Number 2N3019
Grade Military
Qualification MIL-PRF-19500/391

Übersicht

Description

The JANTX2N3019 is a high-performance NPN transistor designed for military and aerospace applications, providing high reliability and robustness under extreme conditions. This device is part of the JAN (Joint Army-Navy) series, which signifies compliance with stringent military specifications.
Key features include a maximum collector current of 800 mA, a voltage rating of 40 V, and a power dissipation capability of up to 1.5 W. Its current gain (hFE) ranges from 20 to 300, making it suitable for amplification and switching applications. The transistor offers a wide frequency response, making it ideal for RF applications as well.
The JANTX2N3019 is housed in a TO-39 metal can package, ensuring durability and thermal stability. Its characteristics make it suitable for use in oscillators, amplifiers, and other critical circuits where reliability is paramount. Overall, it’s a robust choice for applications requiring stringent performance under challenging conditions.

Features

The JANTX2N3019 is a high-performance NPN transistor designed for military and aerospace applications. Key features include:
1. Type: NPN silicon transistor.
2. Max Collector Current (IC): Up to 800 mA.
3. Collector-Emitter Voltage (VCE): Rated at 40 V.
4. Gain: DC current gain (hFE) typically ranges from 50 to 200.
5. Package Type: Available in TO-39 metal can or similar configurations.
6. Operating Temperature: Suitable for extended temperature ranges, often from -55°C to +150°C.
7. High Frequency Performance: Transition frequency (fT) is typically around 200 MHz, enabling RF applications.
8. Military Qualification: JANTX designation indicates it meets stringent military specifications for reliability and performance.
These features make the JANTX2N3019 suitable for high-reliability circuits in demanding environments.

Package

The JANTX2N3019 is typically packaged in a TO-39 metal can or similar package type. It is a high-reliability NPN transistor designed for military and aerospace applications.

Pinout

The JANTX2N3019 is a high-voltage NPN bipolar junction transistor (BJT) designed for use in various applications, including military and aerospace. It typically comes in a metal can package, specifically TO-39, with three pins.
Pin Count and Function:
- Pin 1 (Emitter): The terminal through which the current exits the transistor.
- Pin 2 (Base): The terminal that controls the transistor's operation; a small current at this pin modulates the larger current flowing from collector to emitter.
- Pin 3 (Collector): The terminal through which the current enters the transistor.
The JANTX2N3019 is designed for high voltage applications, with a maximum collector-emitter voltage (Vce) of 150 volts and a collector current (Ic) rating of up to 1 ampere.

Manufacturer

The JANTX2N3019 is manufactured by various semiconductor companies, but it is originally associated with Texas Instruments (TI). Texas Instruments is a global technology company known for its development and manufacturing of semiconductors, particularly analog and digital signal processing chips. The company also specializes in various electronics and embedded systems, serving a wide range of industries, including telecommunications, automotive, and industrial applications. Founded in 1930, TI has a long history of innovation in the electronics sector.

Application

The JANTX2N3019 is a high-voltage NPN transistor primarily used in military and aerospace applications due to its high reliability and ruggedness. It is suitable for amplifier and switching applications in environments where high temperature and radiation resistance are critical. Typical areas include power amplifiers, signal processing, and control circuits in avionic systems and other critical electronic systems.

Equivalent

The JANTX2N3019 is a high-reliability N-channel MOSFET. Equivalent products include 2N3019, JANTX2N3018, and JANTX2N3017, depending on specifications. For military or aerospace applications, consider JANS2N3019. Always verify specific ratings and characteristics, such as voltage and current handling, when selecting an equivalent.

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