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JS28F256P30TFE
FLASH - NOR Memory IC 256Mbit Parallel 52MHz TSOP-56-14.0mm
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- Fr. Teil #JS28F256P30TFE
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Spezifikationen
| Packaging | TSOP-56-14.0mm |
| Clock Frequency | 52MHz |
| Memory Size | 256Mbit |
| Operating temperature | -40℃~+85℃ |
| Voltage - Supply | 1.7V~2V |
| Data Retention - TDR (Year) | 10 Years |
| Page Programming Time (Tpp) | 310us |
| Program / Erase Cycles | 100,000 cycles |
| Standby Supply Current | 65uA |
Übersicht
Description
Key specifications include a maximum read speed of 90 ns and an endurance of up to 100,000 program/erase cycles. The JS28F256P30TFE also incorporates features such as block protection and an array of memory organization options, enabling users to manage data efficiently.
This Flash memory is particularly valued for its reliability, speed, and ability to retain data without power, making it ideal for firmware storage and data retention in various electronic devices.
Features
1. Architecture: It utilizes a 2-bit per cell (MLC) architecture, enabling efficient data storage.
2. Interface: Supports a standard ONFI (Open NAND Flash Interface) protocol for easy integration with various systems.
3. Read/Write Performance: Offers high-speed read operations, typically around 30MB/s, and write speeds of approximately 10MB/s.
4. Endurance: Designed for a high cycle endurance of around 10,000 program/erase cycles, making it suitable for various applications.
5. Data Retention: Provides data retention of up to 10 years at 25°C.
6. Power Consumption: Features low power consumption, making it ideal for battery-operated devices.
7. Package: Available in a compact TSOP (Thin Small Outline Package) form factor for space-constrained applications.
This combination of features makes the JS28F256P30TFE suitable for various applications, including portable devices, consumer electronics, and industrial use.
Package
Pinout
The main functions of the device include:
1. Data Storage: It provides non-volatile storage for a variety of applications.
2. Memory Interface: Supports a parallel interface for data communication between the memory and the host system.
3. Program/Erase: Allows programming and erasing of the memory cells, facilitating data updates.
4. Read/Write Operations: Enables fast read and write operations, making it suitable for high-performance applications.
5. Block Management: Features advanced block management capabilities for wear leveling and bad block management.
This NAND flash is commonly used in embedded systems, consumer electronics, and industrial applications.
Manufacturer
Application
Equivalent
Versand
VersandmethodenWir
bieten Sie globale Versanddienstleistungen durch DHL, FedEx, TNT, UPS oder einen anderen Spediteur Ihrer Wahl.
Versandgebührenreferenz (DHL/FedEx):
DHL: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 2-5 Werktagen.
von FedEx: Versandkosten reichen von $25-$40 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.
UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.
TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.
EMS: Versandkosten reichen von $30-$50 (0.5kg), mit einer geschätzten Lieferzeit von 7-15 Werktagen.
Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.
Zahlungen
Payment Methods
Die Zahlungsfrist ist 100% Prepaid.
Derzeit akzeptieren wir nur die folgenden Zahlungsmethoden:
1. PayPal
2. Kredit- / Debitkarte
3. Überweisung
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