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K4B2G1646C-HCH9
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- Fr. Teil #K4B2G1646C-HCH9
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Spezifikationen
| Manufacturer | JLCPCB Assembly |
| Package | BGA-96_L13.5-W7.5-P0.80 |
Übersicht
Description
The chip utilizes advanced NAND technology to offer improved performance, endurance, and reliability. It supports multiple data transfer modes, enabling faster read/write speeds, which enhances overall device performance. The K4B2G1646C-HCH9 also adheres to industry standards, ensuring compatibility with various systems.
In summary, this flash memory chip is integral for modern electronic devices, providing essential storage capabilities for applications ranging from everyday tasks to complex data management.
Features
1. Memory Type: DDR3 SDRAM, which offers higher bandwidth and lower power consumption compared to DDR2.
2. Capacity: 2GB, suitable for various applications requiring moderate memory resources.
3. Data Rate: Operates at a data rate of 1600 MT/s (mega-transfers per second), allowing for efficient performance in data-intensive applications.
4. Organization: It has a configuration of 256Mx8, which means 256 megabits per chip with an 8-bit wide data bus.
5. Voltage: Typically operates at a voltage of 1.5V, contributing to energy efficiency.
6. Package Type: Available in a compact package, often in a 78-ball FBGA (Fine Ball Grid Array), facilitating easy integration into electronic devices.
7. Applications: Commonly used in laptops, desktops, and embedded systems where reliable memory performance is essential.
Overall, the K4B2G1646C-HCH9 is designed for efficiency and compatibility in various computing environments.
Package
Pinout
In terms of its functionality, this memory chip is designed to operate at a maximum clock speed of 1600 MT/s (megatransfers per second) and typically runs on a voltage of 1.5V. It is primarily used in various applications that require high-density memory, such as in computers, laptops, and other electronic devices.
The K4B2G1646C-HCH9 is known for its low power consumption, making it suitable for mobile and energy-efficient applications.
Manufacturer
As one of the world's largest manufacturers of memory chips, Samsung plays a crucial role in the semiconductor industry, producing products such as DRAM, NAND flash, and system LSI. The K4B2G1646C-HCH9 is a 2GB DDR3 DRAM memory chip, highlighting Samsung's focus on high-performance memory solutions for computers, mobile devices, and other electronic applications. The company is also known for its innovation and extensive R&D efforts, reinforcing its position as a leader in technology and electronics globally.
Application
Equivalent
1. MT8JTF51264HZ (Micron)
2. H5TQ2G83CFR (Hynix)
3. ISM2G50B3 (Integrated Silicon Solution)
4. MTA2G1R64AZ3 (Micron)
Ensure compatibility with your specific application, as timing and voltage specifications may vary.
Versand
VersandmethodenWir
bieten Sie globale Versanddienstleistungen durch DHL, FedEx, TNT, UPS oder einen anderen Spediteur Ihrer Wahl.
Versandgebührenreferenz (DHL/FedEx):
DHL: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 2-5 Werktagen.
von FedEx: Versandkosten reichen von $25-$40 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.
UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.
TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.
EMS: Versandkosten reichen von $30-$50 (0.5kg), mit einer geschätzten Lieferzeit von 7-15 Werktagen.
Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.
Zahlungen
Payment Methods
Die Zahlungsfrist ist 100% Prepaid.
Derzeit akzeptieren wir nur die folgenden Zahlungsmethoden:
1. PayPal
2. Kredit- / Debitkarte
3. Überweisung
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