K4B4G1646B-HCK0

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K4B4G1646B-HCK0

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Spezifikationen

EU RoHS Compliant
ECCN (US) EAR99
Part Status Obsolete
Automotive No
PPAP No
Minimum Operating Supply Voltage (V) 1.425
Typical Operating Supply Voltage (V) 1.5
Maximum Operating Supply Voltage (V) 1.575
Minimum Operating Temperature (°C) 0
Maximum Operating Temperature (°C) 95
Supplier Temperature Grade Commercial
Mounting Surface Mount
Package Width 10
Package Length 13.3
PCB changed 96
Standard Package Name BGA
Supplier Package FBGA
Pin Count 96
Lead Shape Ball
Chip Density (bit) 4G
Number of Bits/Word (bit) 16
Data Bus Width (bit) 16
Maximum Clock Rate (MHz) 1600
DRAM Type DDR3 SDRAM
Organization 256Mx16
Number of Internal Banks 8
Number of Words per Bank 32M
Address Bus Width (bit) 19
Operating Current (mA) 182
Number of I/O Lines (bit) 16
Maximum Access Time (ns) 0.225
Interface Type SSTL_1.5

Übersicht

Description

K4B4G1646B-HCK0 is a type of DRAM (Dynamic Random Access Memory) chip produced by Samsung. Specifically, it is a 4Gb (gigabit) DDR3 SDRAM memory module, organized as 512MB x 32 bits, commonly used in various electronic devices like smartphones, tablets, and computing devices.
DDR3 represents the third generation of Double Data Rate Synchronous Dynamic RAM, which offers improved speed and efficiency over its predecessors. This particular model supports a clock speed of up to 1066 MHz and operates at 1.5V, making it suitable for a range of applications requiring moderate data bandwidth and power consumption.
The "HCK0" in the part number typically indicates specific characteristics such as packaging type and process technology. K4B4G1646B-HCK0 is designed for high-performance applications while maintaining a balance between speed and thermal efficiency, making it a reliable choice for manufacturers in the consumer electronics space.

Features

The K4B4G1646B-HCK0 is a 4Gb DDR3 SDRAM (Synchronous Dynamic Random Access Memory) chip produced by Samsung. It features a data rate of 1600 MT/s (million transfers per second) and operates at a voltage of 1.5V. The chip is organized in a x8 configuration, providing a wide data path for efficient data transfer. It comes in a compact 78-ball FBGA (Fine Ball Grid Array) package, which is ideal for space-constrained applications.
Designed for high-performance computing, it supports a wide range of applications, including mobile devices, consumer electronics, and PCs. Its low power consumption makes it suitable for battery-operated devices, contributing to energy efficiency. Additionally, the K4B4G1646B-HCK0 adheres to JEDEC standards, ensuring compatibility with various memory controllers and systems. Overall, it provides a balance of performance, power efficiency, and reliability for modern computing needs.

Package

The K4B4G1646B-HCK0 is a DRAM memory chip housed in a 78-ball TFBGA (Thin Fine Ball Grid Array) package. This type of package is designed for high-density applications, providing efficient thermal management and a compact footprint suitable for mobile and embedded devices.

Pinout

The K4B4G1646B-HCK0 is a DDR3 SDRAM memory chip with a pin count of 78. It is organized as 4Gb (gigabits) of memory, featuring a 16-bit data width, which makes it suitable for various applications such as mobile devices and industrial applications.
The primary functions of this memory chip include data storage and retrieval at high speeds, with support for multiple data rates including DDR3-1600 and DDR3-1333. It operates with a supply voltage of 1.5V, which helps to reduce power consumption compared to previous generations of memory technologies.
In summary, the K4B4G1646B-HCK0 offers high-density memory with a 78-pin configuration, designed for efficient data processing in modern electronic systems.

Manufacturer

The K4B4G1646B-HCK0 is manufactured by Samsung Electronics, a South Korean multinational conglomerate. Samsung is primarily known for its consumer electronics, semiconductor manufacturing, and a wide range of other technology-related products. The company is one of the largest manufacturers of memory chips in the world, producing DRAM, NAND flash, and other memory solutions for various devices, including smartphones, computers, and servers. Samsung's semiconductor division plays a crucial role in the global supply chain for electronic components, focusing on innovation, performance, and reliability in its products.

Application

The K4B4G1646B-HCK0 is a DDR3 SDRAM memory chip used primarily in various applications, including laptops, desktops, servers, and networking equipment. It is suitable for high-performance computing tasks, data centers, and consumer electronics due to its fast data transfer rates and efficient power consumption. Additionally, it can be utilized in embedded systems and telecommunications for enhanced memory capabilities.

Equivalent

The K4B4G1646B-HCK0 chip is a 4Gb DDR3 SDRAM memory chip. Equivalent products include:
1. Hynix H5TQ4G63AFR - DDR3 SDRAM 4Gb
2. Micron MT41J256M4 - 4Gb DDR3
3. Samsung K4B4G1646E-HCK0 - similar specs
Ensure compatibility with your specific application requirements before substitution.

Versand

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Versandgebührenreferenz (DHL/FedEx):

DHL: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 2-5 Werktagen.

von FedEx: Versandkosten reichen von $25-$40 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

EMS: Versandkosten reichen von $30-$50 (0.5kg), mit einer geschätzten Lieferzeit von 7-15 Werktagen.

Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.

Zahlungen

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