L2N7002SLT1G

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L2N7002SLT1G

MOSFETs

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Übersicht

Description

The L2N7002SLT1G is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for low-voltage applications. It features a maximum drain-source voltage (V_DS) of 60V and a continuous drain current (I_D) rating of 200mA, making it suitable for switching and amplification tasks in various electronic circuits.
This device is characterized by its low on-resistance (R_DS(on)), which enhances efficiency by reducing power loss during operation. The L2N7002SLT1G is commonly used in applications such as low-side switches, driver circuits for relays, and LED drivers.
Its small SOT-23 package facilitates easy integration into compact designs, and it is fully RoHS compliant, ensuring it meets environmental standards. The L2N7002SLT1G is ideal for projects requiring reliable, efficient switching in consumer electronics and automotive applications.

Features

The L2N7002SLT1G is an N-channel MOSFET designed for low-voltage applications. Key features include:
1. Voltage Rating: Maximum drain-source voltage (V_DS) of 60V.
2. Current Rating: Continuous drain current (I_D) of up to 2A.
3. R_DS(on): Low on-state resistance, typically 0.5Ω at V_GS = 10V, enhancing efficiency.
4. Gate Threshold Voltage: V_GS(th) is typically in the range of 2V to 4V, allowing for easy drive with microcontrollers.
5. Package: Available in a small SOT-23 package, facilitating space-saving in PCB designs.
6. Fast Switching: Suitable for high-speed applications, providing quick turn-on and turn-off characteristics.
7. Applications: Commonly used in low-side switching, power management, and signal switching.
Overall, the L2N7002SLT1G is a versatile MOSFET ideal for various consumer electronics and automotive applications.

Package

The L2N7002SLT1G is packaged in a SOT-23 surface mount configuration. This compact package is designed for space-efficient applications and is commonly used in low-power switching and amplification circuits.

Pinout

The L2N7002SLT1G is an N-channel MOSFET with a total of 3 pins. The pin configuration is as follows:
1. Gate (G): This pin is used to control the MOSFET by applying a voltage. It is responsible for turning the device on and off.
2. Drain (D): The drain pin is where the current flows out of the MOSFET when it is in the on state. It connects to the load in the circuit.
3. Source (S): The source pin is where the current enters the MOSFET. It is typically connected to ground in low-side switching applications.
The L2N7002SLT1G is commonly used in low-power applications, such as switching and amplification, due to its low on-resistance and fast switching capabilities.

Manufacturer

The L2N7002SLT1G is manufactured by ON Semiconductor. ON Semiconductor is a global supplier of semiconductor-based solutions, providing a wide range of products including discrete devices, analog, and mixed-signal integrated circuits. The company focuses on energy-efficient electronics, catering to various industries such as automotive, industrial, communications, and consumer markets. Established in 1999, ON Semiconductor has grown through numerous acquisitions and is known for its commitment to innovation and sustainability in the semiconductor industry.

Application

The L2N7002SLT1G is an N-channel MOSFET commonly used in low-power applications such as switching and amplifying signals in electronic circuits. It is suitable for use in power management, DC-DC converters, motor drivers, and signal switching in consumer electronics, automotive, and industrial applications. Its compact size and efficiency make it ideal for space-constrained designs and battery-operated devices.

Equivalent

The L2N7002SLT1G is an N-channel MOSFET. Equivalent products include the 2N7000, 2N7002, BSS138, and BS170. These devices have similar specifications, but always verify datasheets for exact parameters like voltage, current ratings, and package types before substituting.

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