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LM5100AM/NOPB
IC GATE DRVR HALF-BRIDGE 8SOIC
- Hersteller
- Fr. Teil #LM5100AM/NOPB
- Paket SOIC (D)-8
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Spezifikationen
| Package | Bulk |
| ProductStatus | Active |
| DrivenConfiguration | Half-Bridge |
| ChannelType | Independent |
| NumberofDrivers | 2 |
| GateType | N-Channel MOSFET |
| Voltage-Supply | 9V ~ 14V |
| LogicVoltage-VILVIH | 2.3V, - |
| Current-PeakOutput(SourceSink) | 3A, 3A |
| InputType | Non-Inverting |
| HighSideVoltage-Max(Bootstrap) | 118 V |
| Rise/FallTime(Typ) | 430ns, 260ns |
| OperatingTemperature | -40°C ~ 125°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 8-SOIC (0.154, 3.90mm Width) |
Übersicht
Description
Key features of the LM5100AM/NOPB include its ability to operate at high frequencies, typically up to 1 MHz, and its robust design, which includes under-voltage lockout (UVLO) protection and a 3.3V compatible logic input. The driver includes both high-side and low-side gate drivers with independent inputs, allowing for versatile PWM control schemes.
The LM5100AM/NOPB comes in a thermally efficient package, which helps in managing heat dissipation during high-power operations. This driver is part of Texas Instruments' family of efficient gate drivers, offering reliability and enhanced performance for power electronics applications. Its compatibility with a wide range of MOSFETs and ease of integration make it a popular choice for designers.
Features
1. Operating Range: Supports a wide input voltage range, typically from 10V to 100V, making it suitable for various power management applications.
2. Gate Drive Capability: Provides robust driving capability with a peak source current of 1.2A and a peak sink current of 1.8A to effectively control external MOSFETs or IGBTs.
3. Bootstrap Diode: Includes an integrated bootstrap diode to simplify the design and reduce component count.
4. UVLO Protection: Features both high-side and low-side undervoltage lockout (UVLO) to ensure safe operation by preventing the gate drivers from operating below specified thresholds.
5. Propagation Delay: Offers low propagation delay, typically around 30ns, enabling fast switching speeds.
6. Compatibility: Designed to be compatible with logic inputs, making it easy to interface with control circuits.
7. Thermal Performance: Packaged in a thermally efficient SOIC-8 package, suitable for compact designs and effective heat dissipation.
8. Reliability: Built with robust construction to handle demanding environments and ensure longevity.
Overall, the LM5100AM/NOPB is ideal for DC-DC converters, motor drives, and other applications requiring efficient high-side and low-side gate driving.
Package
Pinout
1. HB (High-Side Bootstrap Supply): Provides the supply voltage to the high-side driver.
2. HO (High-Side Output): Drives the gate of the high-side MOSFET.
3. HS (High-Side Source): Connects to the source of the high-side MOSFET, used as a return path for the high-side driver.
4. HI (High-Side Input): Control signal input for the high-side driver.
5. LI (Low-Side Input): Control signal input for the low-side driver.
6. VSS (Ground): Ground reference for the IC.
7. LO (Low-Side Output): Drives the gate of the low-side MOSFET.
8. VDD (Supply Voltage): Powers the low-side driver and logic circuit.
This IC is optimized for driving two N-channel MOSFETs in a half-bridge configuration, often used in switch-mode power supplies, motor drives, and other power electronics applications.
Manufacturer
Application
Equivalent
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Zahlungen
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