MB85R1002ANC-GE1

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MB85R1002ANC-GE1

IC FRAM 1MBIT PARALLEL 48TSOP

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  • Fr. Teil #MB85R1002ANC-GE1
  • Paket 48-TFSOP
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Spezifikationen

Package Tray
ProductStatus Active
MemoryType Non-Volatile
MemoryFormat FRAM
Technology FRAM (Ferroelectric RAM)
MemorySize 1Mb (64K x 16)
MemoryInterface Parallel
WriteCycleTime-WordPage 150ns
AccessTime 150 ns
Voltage-Supply 3V ~ 3.6V
OperatingTemperature -40°C ~ 85°C (TA)
MountingType Surface Mount
Package/Case 48-TFSOP (0.488, 12.40mm Width)

Übersicht

Description

The MB85R1002ANC-GE1 is a non-volatile ferroelectric RAM (FRAM) memory chip manufactured by Fujitsu. It features a storage capacity of 1 megabit (128 kilobytes) and operates on a supply voltage of 2.7V to 3.6V. One of its key advantages is its fast write speed, allowing for unlimited write cycles and low power consumption, making it ideal for applications requiring frequent data updates.
The chip utilizes a serial peripheral interface (SPI) for communication, ensuring easy integration with microcontrollers and other digital devices. It is particularly suited for applications in industrial automation, automotive systems, and consumer electronics, where data integrity and reliability are critical.
Additionally, the MB85R1002ANC-GE1 offers features like a wide temperature range and low standby current, further enhancing its versatility in various environments. Its combination of speed, endurance, and non-volatility makes it a compelling choice for modern embedded systems.

Features

The MB85R1002ANC-GE1 is a 1 Mbit (128 K x 8) FRAM (Ferroelectric RAM) memory device from Fujitsu. Key features include:
- Non-volatile Memory: Retains data without power, making it suitable for applications requiring data retention.
- Fast Write Speed: Offers fast write operations, typically in the range of nanoseconds, which is significantly quicker than traditional EEPROM.
- Endurance: Provides a high write endurance of over 10 trillion read/write cycles, surpassing that of flash memory.
- Low Power Consumption: Operates on low power, enhancing energy efficiency, ideal for battery-operated devices.
- Wide Operating Voltage: Supports a voltage range from 2.7V to 3.6V, allowing flexibility in design.
- SPI Interface: Features a Serial Peripheral Interface (SPI) for simple integration with microcontrollers.
This combination of features makes the MB85R1002ANC-GE1 suitable for applications like data logging, automotive systems, and industrial control, where reliability and speed are critical.

Package

The MB85R1002ANC-GE1 is packaged in a 8-pin TSSOP (Thin Shrink Small Outline Package) format. This compact package design is suitable for space-constrained applications while providing reliable performance for the FRAM memory device.

Pinout

The MB85R1002ANC-GE1 is a 1 Mbit (128 K × 8) FRAM (Ferroelectric Random Access Memory) device. It features a 8-pin SOP (Small Outline Package) form factor.
The pin configuration and functions are as follows:
1. VDD: Power supply voltage.
2. GND: Ground.
3. SDA: Serial data input/output line for I²C communication.
4. SCL: Serial clock line for I²C communication.
5. HOLD: Hold pin that can pause data transmission.
6. WP: Write protect pin that prevents write operations when active.
7. A0: Address pin used to select the device in multi-device configurations.
8. NC: Not connected (no internal connection).
This device operates on a low power supply and offers high endurance and speed, making it suitable for applications requiring frequent read and write operations.

Manufacturer

The MB85R1002ANC-GE1 is manufactured by Fujitsu Semiconductor. Fujitsu is a prominent Japanese multinational company that specializes in computing, telecommunications, and semiconductor technologies. Established as a subsidiary of Fujitsu Limited, Fujitsu Semiconductor focuses on the design and manufacture of advanced semiconductor devices, including memory chips, microcontrollers, and other integrated circuits. The company serves a variety of industries, including automotive, consumer electronics, and industrial applications, providing innovative solutions to meet the evolving demands of technology. The MB85R1002ANC-GE1 specifically is a FRAM (Ferroelectric RAM) device known for its non-volatile memory capabilities, high endurance, and fast write speeds, making it suitable for applications requiring reliable data storage.

Application

The MB85R1002ANC-GE1 is a Ferroelectric RAM (FeRAM) memory chip, commonly used in applications requiring non-volatile memory with fast write speeds and low power consumption. Typical application areas include smart meters, industrial automation, medical devices, consumer electronics, and automotive systems, where reliable data storage and quick access are essential. Its endurance and retention capabilities make it suitable for applications that involve frequent data updates.

Equivalent

The MB85R1002ANC-GE1 is a 1 Mbit FRAM chip, and equivalent products include:
1. Cypress (Infineon) FM25V02 - 2 Mbit FRAM
2. Fujitsu MB85RC256 - 256 Kbit FRAM
3. Microchip MCP1K - 1 Mbit FRAM
4. STMicroelectronics M24SR - 1 Mbit FRAM
Ensure compatibility with your specific application requirements regarding voltage, interface, and memory density.

Versand

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Versandgebührenreferenz (DHL/FedEx):

DHL: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 2-5 Werktagen.

von FedEx: Versandkosten reichen von $25-$40 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

EMS: Versandkosten reichen von $30-$50 (0.5kg), mit einer geschätzten Lieferzeit von 7-15 Werktagen.

Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.

Zahlungen

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