MCU45N10HE3-TP

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MCU45N10HE3-TP

N-CHANNEL MOSFET, DPAK

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Spezifikationen

Package Tape & Reel (TR),Cut Tape (CT)
Series Automotive, AEC-Q101
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 100 V
Current-ContinuousDrain(Id)@25°C 45A
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 17mOhm @ 20A, 10V
Vgs(th)(Max)@Id 2.5V @ 250µA
GateCharge(Qg)(Max)@Vgs 16 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 1135 pF @ 50 V
PowerDissipation(Max) 72W (Tj)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage DPAK (TO-252)

Übersicht

Description

The MCU45N10HE3-TP is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for power management applications. It features a low on-resistance (RDS(on)), which minimizes power loss during operation, making it ideal for applications such as DC-DC converters, motor drivers, and power switching.
Key specifications include a maximum drain-source voltage (VDS) of 100V, a continuous drain current (ID) rating of up to 45A, and a low gate threshold voltage. The device is housed in a durable TO-220 package, facilitating efficient heat dissipation.
The MCU45N10HE3-TP is suitable for both industrial and consumer electronics, providing reliability and efficiency in power handling. It is particularly valued in applications where thermal management and energy efficiency are critical. Overall, this MOSFET is a versatile choice for engineers looking to enhance performance in power electronics designs.

Features

The MCU45N10HE3-TP is an N-channel MOSFET featuring the following key attributes:
1. Voltage Rating: It supports a drain-source voltage (V_DS) of up to 100V.
2. Current Rating: The maximum continuous drain current (I_D) is rated at 45A, making it suitable for high-power applications.
3. R_DS(on): It has a low on-resistance of about 10 mΩ, which enhances efficiency by reducing power loss during operation.
4. Gate Threshold Voltage (V_GS(th)): The threshold voltage ranges from 2V to 4V, allowing for compatibility with various gate drive voltages.
5. Package: It is available in a TO-220 package, facilitating easy heat dissipation and PCB mounting.
6. Fast Switching: Designed for high-speed switching applications, making it ideal for power management and conversion systems.
Overall, the MCU45N10HE3-TP is suitable for applications in power supplies, motor drives, and other high-efficiency circuits.

Package

The MCU45N10HE3-TP is packaged in a TO-220 form factor. This package type is commonly used for power devices, providing efficient heat dissipation and easy mounting on heatsinks.

Pinout

The MCU45N10HE3-TP is a N-channel MOSFET with a pin count of 3. Its primary functions include controlling power delivery and switching applications in electronic circuits. The pins are typically designated as follows:
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage between the Gate and Source turns the device on.
2. Drain (D): This pin is where the main current flows out of the MOSFET. It connects to the load.
3. Source (S): This pin is the input for the current that flows into the MOSFET from the power supply.
The device is designed for high-efficiency switching applications, often used in power management systems, motor control, and other electronic applications requiring low resistance and fast switching speeds.

Manufacturer

The MCU45N10HE3-TP is manufactured by ON Semiconductor, a leading global supplier of semiconductor-based solutions. ON Semiconductor specializes in a wide range of products, including analog, digital, and power management devices, serving various markets such as automotive, industrial, and consumer electronics. The company focuses on energy-efficient technologies and integrated circuits, making it a key player in the semiconductor industry.

Application

The MCU45N10HE3-TP is an N-channel MOSFET used in various applications such as power management, motor control, DC-DC converters, and switching power supplies. Its low RDS(on) characteristic makes it suitable for efficient power switching in automotive, industrial, and consumer electronic devices. Additionally, it is used in battery management systems and renewable energy applications for efficient energy conversion and regulation.

Equivalent

The MCU45N10HE3-TP is a MOSFET (metal-oxide-semiconductor field-effect transistor) typically used in power applications. Equivalent products include the IRF3205, STP55NF06L, and FQP30N06L. Always verify specifications such as voltage, current rating, and on-resistance to ensure compatibility with your specific application.

Versand

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Versandgebührenreferenz (DHL/FedEx):

DHL: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 2-5 Werktagen.

von FedEx: Versandkosten reichen von $25-$40 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

EMS: Versandkosten reichen von $30-$50 (0.5kg), mit einer geschätzten Lieferzeit von 7-15 Werktagen.

Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.

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