MJD45H11G

Bilder sind nur zur Referenz

MJD45H11G

TRANS PNP 80V 8A DPAK

  • Hersteller
  • Fr. Teil #MJD45H11G
  • Paket DPAK-3
  • Datenblatt
  • Auf Lager2609

100% Original und Neu

24 Stunden bereit zum Versand

365 Tage Garantie

RFQ & Erhalten Sie mehr Rabatte

Spezifikationen

Package Tube
ProductStatus Active
TransistorType PNP
Current-Collector(Ic)(Max) 8 A
Voltage-CollectorEmitterBreakdown(Max) 80 V
VceSaturation(Max)@IbIc 1V @ 400mA, 8A
Current-CollectorCutoff(Max) 1µA
DCCurrentGain(hFE)(Min)@IcVce 40 @ 4A, 1V
Power-Max 1.75 W
Frequency-Transition 90MHz
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
Package/Case TO-252-3, DPak (2 Leads + Tab), SC-63

Übersicht

Description

MJD45H11G is a high-voltage NPN power transistor designed for various applications, including switching and amplification. It features a maximum collector-emitter voltage of 45V and a collector current rating of up to 10A, making it suitable for driving motors and other inductive loads. The transistor's high gain and robust construction enable efficient performance in power management circuits.
Key specifications include a low saturation voltage, which enhances efficiency in switching applications, and a wide operating temperature range, ensuring reliability in diverse environments. The MJD45H11G is typically housed in a TO-220 package, facilitating easy heat dissipation.
This transistor is often used in applications such as power supplies, audio amplifiers, and industrial control systems. Its combination of durability, efficiency, and versatility makes it a popular choice among engineers and designers in electronic circuit development.

Features

The MJD45H11G is a high-performance N-channel MOSFET designed for various applications, including power management and switching. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (VDS) of 55V, making it suitable for medium-voltage applications.
2. Current Rating: The device can handle a continuous drain current (ID) of up to 45A, allowing for efficient power handling.
3. RDS(on): It offers a low on-resistance (RDS(on)) of approximately 0.025 ohms, which minimizes power loss during operation.
4. Gate Threshold Voltage: The gate threshold voltage (VGS(th)) ranges from 2V to 4V, ensuring compatibility with low-voltage drive circuits.
5. Packaging: Housed in a TO-220 package, it provides good thermal performance and ease of mounting.
6. Applications: Ideal for use in DC-DC converters, motor drives, and other power electronics applications.
These features make the MJD45H11G a versatile choice for designers looking for reliable performance in power switching applications.

Package

The MJD45H11G is typically packaged in a TO-220 format. This package type features three terminals and is designed for power applications, providing good thermal performance and ease of mounting on heatsinks.

Pinout

The MJD45H11G is a NPN bipolar junction transistor (BJT) in a TO-220 package. It features a pin count of 3. The pin configuration and functions are as follows:
1. Base (B) - The middle pin, used to control the transistor's operation by applying a voltage that allows current to flow from the collector to the emitter.
2. Collector (C) - The left pin, where the main current flows into the transistor from the power supply or load. It is typically connected to a higher voltage than the emitter.
3. Emitter (E) - The right pin, which allows current to flow out of the transistor to ground or the load.
The MJD45H11G is designed for medium power applications and can handle a maximum collector current of 4 A and a collector-emitter voltage of 60 V. It is commonly used in switching and amplification applications.

Manufacturer

The MJD45H11G is manufactured by ON Semiconductor, a global supplier of semiconductor-based solutions. ON Semiconductor specializes in providing a wide range of products, including analog, discrete, and power semiconductors. The company primarily serves various industries such as automotive, communications, computing, consumer, and industrial sectors. Based in Phoenix, Arizona, ON Semiconductor focuses on energy-efficient technologies and has a significant presence in the market for power management and signal processing devices.

Application

The MJD45H11G is a power transistor primarily used in applications such as switching power supplies, motor control circuits, and audio amplification. It is designed for high-speed switching and can handle substantial current, making it suitable for automotive applications, industrial automation, and consumer electronics, where efficient power management is essential.

Equivalent

The MJD45H11G is a power transistor, specifically an NPN type used for switching and amplification. Equivalent products include:
- TIP31
- MPSU01
- BD139
- 2N3055 (for higher power applications)
Always verify specifications like voltage, current, and package type before substitution.

Versand

VersandmethodenWir

bieten Sie globale Versanddienstleistungen durch DHL, FedEx, TNT, UPS oder einen anderen Spediteur Ihrer Wahl.


Versandgebührenreferenz (DHL/FedEx):

DHL: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 2-5 Werktagen.

von FedEx: Versandkosten reichen von $25-$40 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

EMS: Versandkosten reichen von $30-$50 (0.5kg), mit einer geschätzten Lieferzeit von 7-15 Werktagen.

Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.

Zahlungen

Payment Methods

Die Zahlungsfrist ist 100% Prepaid.

Derzeit akzeptieren wir nur die folgenden Zahlungsmethoden:

1. PayPal

2. Kredit- / Debitkarte

3. Überweisung

Ähnliche