MMBF4392LT1G

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MMBF4392LT1G

JFET N-CH 30V 0.225W SOT23-3

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  • Fr. Teil #MMBF4392LT1G
  • Paket SOT23-3
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Spezifikationen

Package Tape & Reel (TR),Cut Tape (CT),Bulk
ProductStatus Active
FETType N-Channel
Voltage-Breakdown(V(BR)GSS) 30 V
DraintoSourceVoltage(Vdss) 30 V
Current-Drain(Idss)@Vds(Vgs=0) 25 mA @ 15 V
Voltage-Cutoff(VGSoff)@Id 2 V @ 10 nA
InputCapacitance(Ciss)(Max)@Vds 14pF @ 15V
Resistance-RDS(On) 60 Ohms
Power-Max 225 mW
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
Package/Case TO-236-3, SC-59, SOT-23-3

Übersicht

Description

The MMBF4392LT1G is a low-noise, N-channel MOSFET designed for RF and high-frequency applications. It features a low threshold voltage, making it suitable for low-voltage operations. The device is housed in a SOT-23 package, which offers a compact footprint ideal for space-constrained designs. With a maximum drain-source voltage (Vds) typically around 60V and a maximum continuous drain current (Id) of up to 200mA, it supports a range of electronic applications including amplifiers, switches, and digital circuits.
The MMBF4392LT1G is known for its fast switching speeds and low on-resistance (Rds(on)), enhancing efficiency in power management. Its low gate-source leakage current and high gain make it a reliable choice for signal processing applications. Additionally, it operates effectively within a wide temperature range, ensuring stability under varying conditions. Overall, the MMBF4392LT1G is a versatile component valued for its performance in modern electronic circuit designs.

Features

The MMBF4392LT1G is a dual N-channel MOSFET designed for high-speed switching applications. Key features include:
1. Maximum Drain-Source Voltage (V_DS): 30V, allowing for a wide range of applications.
2. Continuous Drain Current (I_D): Up to 4.5A, supporting robust performance in various circuits.
3. Low Gate Threshold Voltage (V_GS(th)): Typically between 1V to 3V, enabling efficient operation with low drive voltages.
4. Fast Switching Speed: Suitable for high-frequency applications, enhancing overall system efficiency.
5. Low On-Resistance (R_DS(on)): Typically around 0.15Ω at V_GS = 10V, which minimizes power loss during operation.
6. Package Type: Available in the SOT-23 package for compact design and easy integration into PCBs.
7. RoHS Compliant: Environmentally friendly, meeting global standards for hazardous materials.
These features make the MMBF4392LT1G ideal for applications in power management, signal switching, and motor control.

Package

The MMBF4392LT1G is packaged in a SOT-23 (Small Outline Transistor) format, which is a surface-mount package suitable for space-constrained applications.

Pinout

The MMBF4392LT1G is a dual N-channel MOSFET with a total of 8 pins. Each MOSFET in the package has three terminals: Gate (G), Drain (D), and Source (S). The pin configuration is as follows:
1. Pin 1: Gate (G1) - Controls the first MOSFET.
2. Pin 2: Source (S1) - Source terminal of the first MOSFET.
3. Pin 3: Drain (D1) - Drain terminal of the first MOSFET.
4. Pin 4: Source (S2) - Source terminal of the second MOSFET.
5. Pin 5: Drain (D2) - Drain terminal of the second MOSFET.
6. Pin 6: Gate (G2) - Controls the second MOSFET.
7. Pin 7: Drain (D1) - Drain terminal of the first MOSFET (common for dual configuration).
8. Pin 8: Source (S1) - Source terminal of the first MOSFET (common for dual configuration).
The MMBF4392LT1G is commonly used in switching and amplification applications, offering high-speed performance and low on-resistance.

Manufacturer

The MMBF4392LT1G is manufactured by ON Semiconductor, a global company specializing in semiconductor solutions. ON Semiconductor designs and produces a wide range of products, including analog, discrete, and power management devices. The company serves various markets, including automotive, industrial, and consumer electronics, providing innovative technologies that enhance energy efficiency and performance. With a commitment to sustainability and advanced manufacturing techniques, ON Semiconductor plays a significant role in the semiconductor industry.

Application

The MMBF4392LT1G is an N-channel MOSFET primarily used in low-voltage applications, including switching power supplies, motor control, and audio amplifiers. Its fast switching speed and low on-resistance make it suitable for high-frequency applications and efficient power management in consumer electronics, computer peripherals, and automotive systems.

Equivalent

The MMBF4392LT1G is an N-channel MOSFET. Equivalent products include the BSS138, BS170, and 2N7000. For specific applications, check parameters like voltage, current ratings, and package type to ensure compatibility.

Versand

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Versandgebührenreferenz (DHL/FedEx):

DHL: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 2-5 Werktagen.

von FedEx: Versandkosten reichen von $25-$40 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

EMS: Versandkosten reichen von $30-$50 (0.5kg), mit einer geschätzten Lieferzeit von 7-15 Werktagen.

Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.

Zahlungen

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