MMBF4393LT1G

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MMBF4393LT1G

JFET N-CH 30V 0.225W SOT23-3

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  • Paket SOT23-3
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Spezifikationen

Package Tape & Reel (TR),Cut Tape (CT)
ProductStatus Active
FETType N-Channel
Voltage-Breakdown(V(BR)GSS) 30 V
DraintoSourceVoltage(Vdss) 30 V
Current-Drain(Idss)@Vds(Vgs=0) 5 mA @ 15 V
Voltage-Cutoff(VGSoff)@Id 500 mV @ 10 nA
InputCapacitance(Ciss)(Max)@Vds 14pF @ 15V
Resistance-RDS(On) 100 Ohms
Power-Max 225 mW
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
Package/Case TO-236-3, SC-59, SOT-23-3

Übersicht

Description

The MMBF4393LT1G is a low-noise, N-channel MOSFET designed for high-speed switching applications. It features a low threshold voltage and low on-resistance, making it suitable for a range of applications, including analog switching, RF amplification, and power management. This device typically has a maximum drain-source voltage of 60V and a continuous drain current rating of around 0.5A.
The MMBF4393LT1G is housed in a compact SOT-23 package, which enables efficient PCB space utilization. Its low gate capacitance contributes to rapid switching speeds, enhancing performance in various circuits. The device is also characterized by its high input impedance, ensuring minimal loading on preceding stages.
This MOSFET is often used in consumer electronics, telecommunications, and automotive applications. When integrating the MMBF4393LT1G into designs, it is essential to consider its thermal resistance and ensure proper heat dissipation to maintain reliability and performance.

Features

The MMBF4393LT1G is an N-channel MOSFET designed for low voltage and low power applications. Key features include:
- Maximum Drain-Source Voltage (V_DS): 30V, allowing for a wide range of voltage applications.
- Maximum Continuous Drain Current (I_D): 3.5A, suitable for moderate load requirements.
- Gate Threshold Voltage (V_GS(th)): Typically between 1V to 3V, enabling efficient switching.
- R_DS(on): Low on-resistance (around 0.1Ω at V_GS of 10V), which helps in reducing power losses during operation.
- Package: Available in the SOT-23 package, making it suitable for compact designs.
- High-speed switching: Capable of quick turn-on and turn-off times, beneficial for high-frequency applications.
This MOSFET is commonly used in power management circuits, switching regulators, and other electronic devices needing efficient power handling.

Package

The MMBF4393LT1G is packaged in a SOT-23 (Small Outline Transistor) package type. This surface-mount package is compact and designed for efficient space utilization on circuit boards, making it suitable for various electronic applications.

Pinout

The MMBF4393LT1G is a dual N-channel MOSFET transistor packaged in a SOT-23 surface mount configuration. It has a total of 6 pins.
Pin Configuration:
1. Pin 1 (D): Drain of the first N-channel MOSFET.
2. Pin 2 (G): Gate of the first N-channel MOSFET.
3. Pin 3 (S): Source of the first N-channel MOSFET.
4. Pin 4 (S): Source of the second N-channel MOSFET.
5. Pin 5 (G): Gate of the second N-channel MOSFET.
6. Pin 6 (D): Drain of the second N-channel MOSFET.
Function:
The MMBF4393LT1G is designed for low-voltage and low-power switching applications, providing efficient performance in various electronic circuits. Its dual MOSFET architecture allows for compact designs in applications such as power management, signal switching, and amplifier configurations. The device is characterized by low on-resistance and fast switching speeds.

Manufacturer

The MMBF4393LT1G is manufactured by ON Semiconductor, a global semiconductor company. ON Semiconductor specializes in the design and manufacturing of a wide range of semiconductor components, including analog, discrete, and power management devices. The company serves various industries, including automotive, industrial, consumer, and communications. Established in 1999, ON Semiconductor has a significant presence in the semiconductor market, focusing on energy-efficient technologies and solutions that enable customers to create innovative products.

Application

The MMBF4393LT1G is a N-channel MOSFET primarily used in low-voltage applications. Key application areas include power management in portable devices, signal switching in communication equipment, and high-speed switching in digital circuits. It is also suitable for audio amplification and as a switch in various consumer electronics. Its low on-resistance and fast switching capabilities make it ideal for these uses.

Equivalent

The MMBF4393LT1G is a dual N-channel MOSFET. Equivalent products include the BSS123, 2N7000, and BS170, which offer similar characteristics for low-power applications. Always verify specifications such as V_DS, I_D, and R_DS(on) to ensure compatibility for your specific use case.

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