MMBT3904LT1G

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MMBT3904LT1G

TRANS NPN 40V 0.2A SOT23-3

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  • Fr. Teil #MMBT3904LT1G
  • Paket SOT23-3
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Spezifikationen

Package Tape & Reel (TR),Cut Tape (CT),Bulk
ProductStatus Active
TransistorType NPN
Current-Collector(Ic)(Max) 200 mA
Voltage-CollectorEmitterBreakdown(Max) 40 V
VceSaturation(Max)@IbIc 300mV @ 5mA, 50mA
DCCurrentGain(hFE)(Min)@IcVce 100 @ 10mA, 1V
Power-Max 300 mW
Frequency-Transition 300MHz
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
Package/Case TO-236-3, SC-59, SOT-23-3

Übersicht

Description

The MMBT3904LT1G is a general-purpose NPN bipolar junction transistor (BJT) known for its versatility in various electronic applications. It is commonly used in amplification and switching processes due to its reliable performance and efficiency. This transistor features a maximum collector current of 200 mA and a maximum collector-emitter voltage of 40 V, making it suitable for low-power applications.
The "LT1G" designation indicates that it is a lead-free, RoHS-compliant package, making it environmentally friendly. The MMBT3904LT1G is typically housed in a SOT-23 package, which is compact and suitable for surface-mount technology (SMT).
Key characteristics include a current gain (hFE) range of 100 to 300, with a transition frequency (fT) of about 300 MHz, which allows for good high-frequency performance. Overall, the MMBT3904LT1G is an essential component in many circuits, favored for its affordability, availability, and ease of use in various electronic designs.

Features

The MMBT3904LT1G is a NPN bipolar junction transistor (BJT) designed for general-purpose switching and amplification applications. Its key features include:
1. Voltage Rating: Collector-Emitter Voltage (Vce) up to 40V, allowing for versatility in various circuits.
2. Current Rating: Continuous Collector Current (Ic) up to 200mA, suitable for a range of signal applications.
3. Power Dissipation: Maximum power dissipation of 625mW, enabling effective heat management in typical operating conditions.
4. Gain: High DC current gain (hFE) ranging from 100 to 300, providing efficient signal amplification.
5. Package: Available in SOT-23 surface mount package, offering compact design for PCB applications.
6. Temperature Range: Operating junction temperature up to 150°C, ensuring reliability in demanding environments.
This transistor is widely used in electronic circuits for tasks such as switching, amplification, and signal modulation in consumer electronics, automotive, and industrial applications.

Package

The MMBT3904LT1G is packaged in a SOT-23 surface mount package. This compact, plastic package is designed for low-power applications, providing efficient thermal performance and is suitable for automated assembly.

Pinout

The MMBT3904LT1G is a NPN bipolar junction transistor (BJT) in a SOT-23 package. It has three pins, with the following functions:
1. Base (B): This is the control pin where a small input current can control the larger current flowing between the collector and emitter.
2. Collector (C): This is the terminal where the current flows in from the power supply to the load. It is the output terminal of the transistor.
3. Emitter (E): This is the terminal through which the current exits the transistor back to ground or the negative side of the power supply.
The typical applications for the MMBT3904LT1G include switching and amplification in electronic circuits. Its compact size and efficiency make it suitable for use in space-constrained environments.

Manufacturer

The MMBT3904LT1G is manufactured by ON Semiconductor, a global semiconductor company headquartered in Phoenix, Arizona. ON Semiconductor specializes in creating a wide range of semiconductor solutions, including power management, signal management, and discrete devices. The company serves various industries such as automotive, industrial, communications, and consumer electronics. ON Semiconductor focuses on energy-efficient technologies and innovative solutions to support a sustainable future in electronics.

Application

The MMBT3904LT1G is a general-purpose NPN bipolar junction transistor used in various applications, including signal amplification, switching, and linear applications. It is commonly found in consumer electronics, audio equipment, power management circuits, and low-frequency applications. Its compact size and versatility make it suitable for use in portable devices and compact circuit designs.

Equivalent

The MMBT3904LT1G is a NPN bipolar junction transistor (BJT). Equivalent products include the 2N3904, BC547, 2N2222, and 2N4401. These transistors have similar electrical characteristics but may differ in packaging and specific ratings, so verify the datasheets for exact specifications before substitution.

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