MMBT3906WT1G

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MMBT3906WT1G

TRANS PNP 40V 0.2A SC70-3

  • Hersteller
  • Fr. Teil #MMBT3906WT1G
  • Paket SC-70,SOT-323
  • Datenblatt
  • Auf Lager5399

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Spezifikationen

Package Tape & Reel (TR),Cut Tape (CT),Bulk
ProductStatus Active
TransistorType PNP
Current-Collector(Ic)(Max) 200 mA
Voltage-CollectorEmitterBreakdown(Max) 40 V
VceSaturation(Max)@IbIc 400mV @ 5mA, 50mA
DCCurrentGain(hFE)(Min)@IcVce 100 @ 10mA, 1V
Power-Max 150 mW
Frequency-Transition 250MHz
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
Package/Case SC-70, SOT-323

Übersicht

Description

The MMBT3906WT1G is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. It features a maximum collector current (Ic) of 800 mA and a maximum collector-emitter voltage (Vce) of 40V, making it suitable for various electronic circuits. The device is housed in a surface-mount SOT-23 package, which provides compactness and ease of integration into modern electronic systems.
Key specifications include a gain (hFE) range of 100 to 300, allowing for effective signal amplification. It typically operates with a low base-emitter saturation voltage (Vbe(sat)), enhancing efficiency in switching applications. The MMBT3906WT1G is commonly used in consumer electronics, signal processing, and power management circuits. Its reliability and performance make it a popular choice for engineers and designers looking for robust PNP transistor solutions.

Features

The MMBT3906WT1G is a PNP Bipolar Junction Transistor (BJT) designed for low power switching and amplification applications. Key features include:
- Maximum Collector-Emitter Voltage (Vce): 40V, allowing it to handle moderate voltage levels.
- Maximum Collector Current (Ic): 800mA, suitable for a variety of load conditions.
- Current Gain (hFE): Ranges from 100 to 300 at a collector current of 10mA, ensuring efficient amplification.
- Package Type: Available in a SOT-23 package, which offers a compact size for PCB space-saving designs.
- Operating Temperature Range: -55°C to +150°C, ensuring reliable performance in diverse environments.
- Fast switching speed: Allows for efficient operation in digital applications.
- Low noise: Ideal for audio and RF amplification applications.
These features make the MMBT3906WT1G suitable for consumer electronics, automotive applications, and other general-purpose uses.

Package

The MMBT3906WT1G is packaged in a SOT-23 (Small Outline Transistor) format. This surface-mount package is compact and used for various electronic applications, offering good thermal performance and efficiency.

Pinout

The MMBT3906WT1G is a PNP bipolar junction transistor (BJT) in a surface mount package. It typically has a pin count of 3. The pin configuration and their functions are as follows:
1. Emitter (E): This is the terminal through which the majority charge carriers (holes for PNP transistors) exit the device.
2. Base (B): This terminal controls the operation of the transistor by allowing current to flow into or out of the base region, thereby modulating the current flow between the emitter and collector.
3. Collector (C): This terminal is where the majority charge carriers enter the device, allowing the transistor to amplify or switch the input signal.
The MMBT3906WT1G is commonly used in low-power switching and amplification applications.

Manufacturer

The MMBT3906WT1G is manufactured by ON Semiconductor, a global semiconductor company headquartered in Phoenix, Arizona. ON Semiconductor specializes in designing and manufacturing a wide range of semiconductor components, including analog, discrete, and logic devices. The company serves various industries such as automotive, industrial, communications, consumer electronics, and computing. ON Semiconductor focuses on energy-efficient solutions and is known for its commitment to innovation, sustainability, and providing high-performance products that meet the growing demand for efficient power management and connectivity in modern electronic applications.

Application

The MMBT3906WT1G is a PNP bipolar junction transistor commonly used in low-power analog and digital applications. Its main application areas include signal amplification, switching, and driver circuits in consumer electronics, audio equipment, and communication devices. It is also utilized in light-emitting diode (LED) drivers and as a general-purpose transistor in various electronic circuits.

Equivalent

The MMBT3906WT1G is a PNP bipolar junction transistor (BJT). Equivalent products include the 2N2907, 2N5087, and BC556. These transistors have similar electrical characteristics and can typically be used interchangeably in circuits, depending on specific application requirements. Always check datasheets for exact specifications.

Versand

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Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.

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