MMBT4403LT1G

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MMBT4403LT1G

TRANS PNP 40V 0.6A SOT23-3

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  • Fr. Teil #MMBT4403LT1G
  • Paket SOT23-3
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Spezifikationen

Package Tape & Reel (TR),Cut Tape (CT),Bulk
ProductStatus Active
TransistorType PNP
Current-Collector(Ic)(Max) 600 mA
Voltage-CollectorEmitterBreakdown(Max) 40 V
VceSaturation(Max)@IbIc 750mV @ 50mA, 500mA
DCCurrentGain(hFE)(Min)@IcVce 100 @ 150mA, 2V
Power-Max 300 mW
Frequency-Transition 200MHz
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
Package/Case TO-236-3, SC-59, SOT-23-3

Übersicht

Description

The MMBT4403LT1G is a general-purpose NPN bipolar junction transistor (BJT), commonly used in various electronic applications such as switching and amplification. It features a maximum collector current of 600 mA and a maximum collector-emitter voltage of 50 V, making it suitable for moderate power applications.
The transistor is housed in a compact SOT-23 package, allowing for space-efficient designs. Its low saturation voltage and fast switching speeds enable efficient performance in both analog and digital circuits. The MMBT4403LT1G is characterized by a high current gain (hFE), typically ranging from 100 to 300, which enhances its amplification capabilities.
Applications include signal processing, audio amplification, and low-power switching circuits. The MMBT4403LT1G is widely recognized for its reliability and versatility, making it a popular choice among designers and engineers in consumer electronics and industrial applications.

Features

The MMBT4403LT1G is an NPN bipolar junction transistor (BJT) commonly used in low-power switching and amplification applications. Key features include:
1. Voltage Rating: It has a collector-emitter voltage (Vce) rating of 40V, allowing it to handle a range of applications.
2. Current Rating: The maximum collector current (Ic) is 600mA, making it suitable for various low-power circuits.
3. Gain: The transistor offers a DC current gain (hFE) range typically from 100 to 300, enhancing its amplification capabilities.
4. Package: It is available in a SOT-23 package, providing a compact footprint suitable for space-constrained designs.
5. Operating Temperature: The junction temperature can operate between -55°C to +150°C, ensuring reliability in various environmental conditions.
6. Switching Speed: The MMBT4403LT1G features fast switching times, making it ideal for high-speed applications.
Overall, it’s a versatile component suitable for consumer electronics, automotive, and industrial applications.

Package

The MMBT4403LT1G is available in a SOT-23 package type. This surface-mount package is commonly used for low-power transistors, providing compact size and efficient thermal performance.

Pinout

The MMBT4403LT1G is a NPN bipolar junction transistor (BJT) in a SOT-23 package, which typically features three pins. The pin configuration and their functions are as follows:
1. Pin 1 (Emitter - E): This is the emitter terminal where current flows out of the transistor.
2. Pin 2 (Base - B): This is the base terminal, which controls the operation of the transistor by allowing a small current to flow into it, enabling larger current flow between the collector and emitter.
3. Pin 3 (Collector - C): This is the collector terminal where the current enters the transistor.
The MMBT4403LT1G is commonly used in low-power switching and amplification applications.

Manufacturer

The MMBT4403LT1G is manufactured by ON Semiconductor, a company that specializes in semiconductor solutions. ON Semiconductor provides a wide range of products, including analog, digital, and mixed-signal devices, as well as power management and sensor technologies. The company serves various industries, including automotive, industrial, communication, and consumer electronics. Established in 1999, ON Semiconductor focuses on energy-efficient technologies and aims to support sustainable development by offering innovative solutions that reduce energy consumption.

Application

The MMBT4403LT1G is a NPN bipolar junction transistor used in various applications, including switching, amplification, and signal processing. It is commonly found in consumer electronics, automotive systems, and industrial equipment. Its features make it suitable for low-power applications such as audio amplifiers, RF amplifiers, and small signal switching circuits.

Equivalent

The MMBT4403LT1G is a low-power NPN bipolar junction transistor. Equivalent products include the 2N4403, BC547, 2N5551, and MPS2222. Ensure to check specifications like voltage, current ratings, and package types for compatibility in your application.

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