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MMBTA55LT1G
TRANS PNP 60V 0.5A SOT23-3
- Hersteller
- Fr. Teil #MMBTA55LT1G
- Paket TO-236-3, SC-59, SOT-23-3
- Datenblatt MMBTA55LT1G DataSheet
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Spezifikationen
| Supplier | onsemi |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| ProductStatus | Active |
| TransistorType | PNP |
| Current-Collector(Ic)(Max) | 500 mA |
| Voltage-CollectorEmitterBreakdown(Max) | 60 V |
| VceSaturation(Max)@IbIc | 250mV @ 10mA, 100mA |
| Current-CollectorCutoff(Max) | 100nA |
| DCCurrentGain(hFE)(Min)@IcVce | 100 @ 100mA, 1V |
| Power-Max | 225 mW |
| Frequency-Transition | 50MHz |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | TO-236-3, SC-59, SOT-23-3 |
Übersicht
Description
The device is characterized by its fast switching times, which enhance efficiency and reduce energy loss in electronic circuits. Its compact package allows for easy integration into space-constrained designs. The MMBTA55LT1G also offers thermal stability and reliability, making it a popular choice among engineers for designing efficient power solutions.
Suitable for various applications, including consumer electronics and industrial equipment, this MOSFET is widely used in both professional and hobbyist electronics. Key specifications include its gate threshold voltage, maximum continuous drain current, and thermal resistance, which should be considered in circuit design to ensure optimal performance.
Features
1. Voltage and Current Ratings: It has a maximum drain-source voltage (V_DS) of 55V and can handle continuous drain currents (I_D) up to 30A.
2. R_DS(on): The on-resistance is low, typically around 0.018 ohms, which minimizes power loss during operation.
3. Gate Threshold Voltage (V_GS(th)): This device has a V_GS(th) range of 1V to 3V, making it suitable for logic-level applications.
4. Package: It is available in a TO-220 package, which aids in efficient thermal dissipation.
5. Fast Switching: The MOSFET exhibits fast switching speeds, making it ideal for high-frequency applications.
6. Low Gate Charge (Q_g): The low gate charge enhances efficiency and reduces drive power requirements.
Overall, the MMBTA55LT1G is ideal for power management, switching applications, and motor control due to its robust performance and efficiency.
Package
Pinout
Pin Configuration:
1. Base (B) - The control terminal used to regulate current flow.
2. Collector (C) - The terminal through which the majority of current flows when the transistor is in operation.
3. Emitter (E) - The terminal that emits charge carriers.
Function:
The MMBTA55LT1G is primarily used for general-purpose amplification and switching applications. It features a maximum collector current of 600 mA and a maximum collector-emitter voltage of 45 V, making it suitable for various low-power electronic circuits. Its small size and efficiency make it ideal for compact designs in consumer electronics, automotive, and industrial applications.
Manufacturer
Application
Equivalent
Versand
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Versandgebührenreferenz (DHL/FedEx):
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Zahlungen
Payment Methods
Die Zahlungsfrist ist 100% Prepaid.
Derzeit akzeptieren wir nur die folgenden Zahlungsmethoden:
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3. Überweisung
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