MMBTH10LT1G

Bilder sind nur zur Referenz

MMBTH10LT1G

RF TRANS NPN 25V 650MHZ SOT23-3

  • Hersteller
  • Fr. Teil #MMBTH10LT1G
  • Paket SOT23-3
  • Datenblatt
  • Auf Lager6377

100% Original und Neu

24 Stunden bereit zum Versand

365 Tage Garantie

RFQ & Erhalten Sie mehr Rabatte

Spezifikationen

Package Tape & Reel (TR),Cut Tape (CT)
ProductStatus Active
TransistorType NPN
Voltage-CollectorEmitterBreakdown(Max) 25V
Frequency-Transition 650MHz
Power-Max 225mW
DCCurrentGain(hFE)(Min)@IcVce 60 @ 4mA, 10V
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
Package/Case TO-236-3, SC-59, SOT-23-3

Übersicht

Description

The MMBTH10LT1G is a high-performance N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) designed for various electronic applications. It features low on-resistance (R_DS(on)), high-speed switching capabilities, and is suitable for power management tasks such as in power supplies, motor drivers, and load switching.
This MOSFET has a maximum drain-source voltage (V_DS) of 100V and a continuous drain current (I_D) rating of 10A, making it versatile for handling significant loads. The device is typically housed in a TO-220 package, which allows for efficient heat dissipation.
It's important to consider thermal management and proper driving voltage to ensure optimal performance and reliability. The MMBTH10LT1G is favored in both consumer and industrial applications due to its efficiency and robustness. Always refer to the manufacturer's datasheet for detailed specifications and application guidelines.

Features

The MMBTH10LT1G is a low-power NPN transistor designed for various electronic applications. Key features include:
1. Type: NPN bipolar junction transistor (BJT).
2. Voltage Rating: Collector-Emitter Voltage (Vce) up to 50V, allowing for versatile applications.
3. Current Rating: Maximum collector current (Ic) of 500mA, suitable for driving low to moderate loads.
4. Power Dissipation: Capable of dissipating up to 500mW, enabling efficient operation in various circuits.
5. Gain: High current gain (hFE), typically ranging from 100 to 300, ensuring effective amplification.
6. Frequency Response: Suitable for applications in the audio frequency range due to its transition frequency (fT).
7. Package: Available in SOT-23 surface mount package, facilitating compact design and ease of integration in modern circuits.
8. Applications: Commonly used in amplifiers, switching applications, and signal processing.
Overall, the MMBTH10LT1G is a versatile and efficient choice for electronic designers.

Package

The MMBTH10LT1G is packaged in a SOT-23 form factor, which is a small surface-mount package.

Pinout

The MMBTH10LT1G is a miniature NPN transistor in a SOT-23 package with a pin count of 3. The pin configuration is as follows:
1. Collector (C): The output terminal where the current flows out of the transistor.
2. Base (B): The control terminal that regulates the transistor's operation; applying current here allows current to flow from the collector to the emitter.
3. Emitter (E): The input terminal where the current enters the transistor.
This transistor is commonly used for general-purpose amplification and switching applications. It can handle a collector current (I_C) of up to 600 mA and has a maximum voltage rating (V_CE) of 50V.

Manufacturer

The MMBTH10LT1G is manufactured by ON Semiconductor, a global semiconductor company. ON Semiconductor specializes in designing and manufacturing a wide range of semiconductor products, including transistors, diodes, analog ICs, and power management devices. Their products are widely used in various applications, such as automotive, industrial, consumer electronics, and telecommunications. The company focuses on providing efficient and innovative solutions to meet the demands of modern electronic systems.

Application

The MMBTH10LT1G is a low-power NPN bipolar junction transistor commonly used in switching and amplification applications. Its primary areas include signal amplification in audio devices, driver circuits for LEDs and relays, and RF applications in communication devices. It is also utilized in low-voltage power regulation and signal processing circuits due to its compact size and efficiency.

Equivalent

The MMBTH10LT1G is a NPN bipolar junction transistor (BJT). Equivalent products include the 2N3904, BC547, and 2N2222 transistors. Always verify specifications such as voltage, current ratings, and package type to ensure compatibility in your particular application.

Versand

VersandmethodenWir

bieten Sie globale Versanddienstleistungen durch DHL, FedEx, TNT, UPS oder einen anderen Spediteur Ihrer Wahl.


Versandgebührenreferenz (DHL/FedEx):

DHL: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 2-5 Werktagen.

von FedEx: Versandkosten reichen von $25-$40 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

EMS: Versandkosten reichen von $30-$50 (0.5kg), mit einer geschätzten Lieferzeit von 7-15 Werktagen.

Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.

Zahlungen

Payment Methods

Die Zahlungsfrist ist 100% Prepaid.

Derzeit akzeptieren wir nur die folgenden Zahlungsmethoden:

1. PayPal

2. Kredit- / Debitkarte

3. Überweisung

Ähnliche