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MMRF1304LR5
RF MOSFET LDMOS 50V NI360
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- Fr. Teil #MMRF1304LR5
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Spezifikationen
| Part Status | Obsolete |
| Technology | LDMOS |
| Frequency | 512MHz |
| Gain | 25.9dB |
| Voltage - Test | 50 V |
| Current - Test | 10 mA |
| Power - Output | 25W |
| Voltage - Rated | 133 V |
| Mounting Type | Chassis Mount |
| Package / Case | NI-360 |
| Supplier Device Package | NI-360 |
| Base Product Number | MMRF1 |
Übersicht
Description
The battery incorporates advanced safety features to prevent overheating and short circuits, enhancing reliability during operation. It is also constructed with environmentally friendly materials, aligning with modern sustainability standards.
When considering MMRF1304LR5 for use, it’s essential to ensure compatibility with the device specifications, including size, voltage requirements, and energy needs. Proper handling and adherence to safety guidelines are critical to maximize performance and lifespan. Overall, MMRF1304LR5 represents a reliable choice for energy storage in various technological applications.
Features
1. Frequency Range: It operates efficiently in the 1.8 to 2.5 GHz frequency range, making it suitable for cellular, Wi-Fi, and other communication systems.
2. Output Power: The transistor can deliver high output power, typically around 50 watts, enabling robust signal transmission.
3. High Efficiency: It offers excellent power efficiency, reducing heat generation and improving overall system performance.
4. Linear Performance: Designed for linear operation, it supports applications requiring high linearity, such as in amplifiers for 4G and 5G systems.
5. Package Type: The MMRF1304LR5 is housed in an LGA (Land Grid Array) package, which enhances thermal management and helps in compact designs.
6. Wide Bandwidth: Its wide bandwidth capabilities make it versatile for various RF applications.
7. Robustness: The device is built to withstand challenging operating conditions, ensuring reliability in demanding environments.
These features make the MMRF1304LR5 an ideal choice for modern RF applications.
Package
Pinout
1. Gate (G): Controls the switching of the MOSFET.
2. Drain (D): The output terminal where current flows out.
3. Source (S): The terminal through which current enters the MOSFET.
4. Source (S): Another source pin for connection to ground or negative voltage.
5. Gate (G): Another gate pin for control purposes.
6. Drain (D): Additional drain pin for parallel operation.
7. Gate-Source (GS): May be used for specific applications.
8. Drain-Source (DS): Often used for measurement or feedback purposes.
This device is commonly used in high-frequency and high-efficiency applications due to its low on-resistance and fast switching capabilities.
Manufacturer
Application
Equivalent
Versand
VersandmethodenWir
bieten Sie globale Versanddienstleistungen durch DHL, FedEx, TNT, UPS oder einen anderen Spediteur Ihrer Wahl.
Versandgebührenreferenz (DHL/FedEx):
DHL: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 2-5 Werktagen.
von FedEx: Versandkosten reichen von $25-$40 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.
UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.
TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.
EMS: Versandkosten reichen von $30-$50 (0.5kg), mit einer geschätzten Lieferzeit von 7-15 Werktagen.
Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.
Zahlungen
Payment Methods
Die Zahlungsfrist ist 100% Prepaid.
Derzeit akzeptieren wir nur die folgenden Zahlungsmethoden:
1. PayPal
2. Kredit- / Debitkarte
3. Überweisung
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