MRA4007T3G

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MRA4007T3G

DIODE GEN PURP 1000V 1A SMA

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  • Fr. Teil #MRA4007T3G
  • Paket SMA-2
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Spezifikationen

Package Tape & Reel (TR),Cut Tape (CT),Bulk
ProductStatus Active
DiodeType Standard
Voltage-DCReverse(Vr)(Max) 1000 V
Current-AverageRectified(Io) 1A
Voltage-Forward(Vf)(Max)@If 1.1 V @ 1 A
Speed Standard Recovery >500ns, > 200mA (Io)
Current-ReverseLeakage@Vr 10 µA @ 1000 V
MountingType Surface Mount
Package/Case DO-214AC, SMA
SupplierDevicePackage SMA

Übersicht

Description

The MRA4007T3G is a silicon N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-speed switching applications. It features a low on-resistance, allowing for efficient power management with minimal energy loss. This MOSFET is suitable for various applications, including power supplies, motor control, and RF amplifiers.
Key specifications include a maximum drain-source voltage (V_DS) of 60V, a maximum gate-source voltage (V_GS) of ±20V, and a continuous drain current (I_D) rating of 30A. The MRA4007T3G is packaged in a TO-220 housing, facilitating effective heat dissipation, which is critical in high-power applications.
Its fast switching capabilities and robustness make it a popular choice in both consumer and industrial electronics. The MRA4007T3G is ideal for engineers looking to design reliable, efficient circuits that require high-speed switching performance.

Features

The MRA4007T3G is a high-voltage, fast-recovery rectifier diode suitable for a variety of applications. Key features include:
- Max Repetitive Reverse Voltage (V_RRM): 1000V, allowing it to handle high voltage applications.
- Average Forward Current (I_F): 1A, providing substantial current handling capability.
- Peak Forward Surge Current (I_FSM): 30A, enabling it to withstand brief surges.
- Fast Recovery Time: Typically around 30 nanoseconds, making it ideal for switching applications.
- Low Forward Voltage Drop: Contributes to increased efficiency and reduced heat dissipation.
- Package Type: Available in a DO-214AA (SMB) package, which is compact and suitable for surface mount applications.
- Temperature Range: Operates effectively in a wide temperature range, enhancing reliability in various conditions.
This diode is commonly used in power supply circuits, inverters, and other applications where efficient rectification is required.

Package

The MRA4007T3G is packaged in a DO-214AA (also known as SMA) package type. It is a surface-mount rectifier diode designed for high-speed switching applications.

Pinout

The MRA4007T3G is a silicon rectifier diode with a total of two pins. Its primary function is to convert alternating current (AC) into direct current (DC) by allowing current to flow in one direction while blocking it in the opposite direction.
This diode has a maximum repetitive reverse voltage (V_RRM) of 1000V and a forward current (I_F) rating of 1A. It is commonly used in various applications such as power supplies, battery chargers, and signal demodulation. The MRA4007T3G is part of the MRA series of diodes, known for their reliability and efficiency in high-voltage applications.

Manufacturer

The MRA4007T3G is manufactured by ON Semiconductor, a global semiconductor company. ON Semiconductor focuses on providing a wide range of semiconductor solutions, including power management, analog, and digital devices. The company serves various markets, including automotive, industrial, cloud computing, and consumer electronics. It is known for its commitment to advancing energy-efficient technologies and enabling connectivity in a rapidly evolving digital world.

Application

The MRA4007T3G is a general-purpose silicon rectifier diode, primarily used in applications such as power supply rectification, voltage regulation, and signal demodulation. Its features make it suitable for consumer electronics, automotive electronics, and industrial power systems. Additionally, it is employed in protection circuits and as a freewheeling diode in inductive load applications.

Equivalent

The MRA4007T3G is a general-purpose, low leakage rectifier diode. Equivalent products include the 1N4007, 1N5408, and 1N1184R, among others. These diodes can typically handle similar voltage and current ratings, but always verify specifications for your application.

Versand

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Versandgebührenreferenz (DHL/FedEx):

DHL: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 2-5 Werktagen.

von FedEx: Versandkosten reichen von $25-$40 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

EMS: Versandkosten reichen von $30-$50 (0.5kg), mit einer geschätzten Lieferzeit von 7-15 Werktagen.

Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.

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