MT28EW01GABA1HJS-0SIT

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MT28EW01GABA1HJS-0SIT

IC FLASH 1GBIT PARALLEL 56TSOP

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Spezifikationen

Part Status Active
Base Product Number MT28EW01
DigiKey Programmable Not Verified
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NOR
Memory Size 1Gbit
Memory Organization 128M x 8, 64M x 16
Memory Interface Parallel
Write Cycle Time - Word, Page 60ns
Voltage - Supply 2.7V ~ 3.6V
Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount
Package 56-TFSOP (0.724", 18.40mm Width)
Supplier Device Package 56-TSOP
Packaging Tray
Access Time 95 ns

Übersicht

Description

The MT28EW01GABA1HJS-0SIT is a type of NAND flash memory produced by Micron Technology. It features a capacity of 1 gigabit (1Gb) and is designed for applications requiring non-volatile storage, such as mobile devices, consumer electronics, and automotive systems. This memory operates with a synchronous interface, allowing for faster data transfer rates compared to asynchronous NAND.
Key specifications include support for multiple operating voltages, typically ranging from 1.8V to 3.3V, which makes it versatile for various applications. It employs a multi-level cell (MLC) architecture, balancing density and performance, and is often utilized in environments where space and power efficiency are critical.
Additionally, the device is compatible with standard programming and erasing protocols, making integration into existing systems relatively straightforward. Its robust endurance and reliability characteristics make it suitable for demanding applications.

Features

The MT28EW01GABA1HJS-0SIT is a NAND Flash memory device from Micron Technology, designed for embedded applications. Key features include:
1. Density: 1 Gigabit (128MB) capacity, suitable for various storage needs.
2. Interface: Supports a Serial Peripheral Interface (SPI) for easy integration into hardware systems.
3. Architecture: Utilizes a multi-level cell (MLC) technology, enhancing storage efficiency.
4. Performance: Offers read speeds up to 104 MB/s and write speeds of around 20 MB/s, suitable for moderate data transfer requirements.
5. Endurance: Designed for high endurance with a significant number of program/erase (P/E) cycles, suitable for applications demanding reliability.
6. Power Consumption: Low power operation, making it ideal for battery-powered devices.
7. Temperature Range: Industrial-grade temperature range (-40°C to +85°C), suitable for harsh environments.
These features make the MT28EW01GABA1HJS-0SIT a versatile choice for consumer electronics, automotive applications, and various embedded systems.

Package

The MT28EW01GABA1HJS-0SIT is a memory device packaged in a TSOP (Thin Small Outline Package) format. This type of packaging is designed for high-density applications, providing a compact footprint suitable for various electronic devices.

Pinout

The MT28EW01GABA1HJS-0SIT is a 1 Gb (Gigabit) NAND Flash memory device from Micron Technology. It features a total of 48 pins. The primary function of this device is to provide non-volatile memory storage, used in various applications such as smartphones, tablets, and other embedded systems.
The pins are used for different functions, including power supply, ground, data input/output, command interface, and control signals. Key pin functions include:
- Data I/O Pins: For data transfer (e.g., DQ0-DQ7).
- Command/Address Pins: For sending commands and addressing memory locations (e.g., WE, RE, CE).
- Power and Ground Pins: For supplying power to the device (e.g., VCC, VSS).
- Chip Enable and Write Enable: For controlling operations (e.g., CE for chip selection, WE for write operations).
This device uses a Serial Peripheral Interface (SPI) for communication, allowing efficient data access and control.

Manufacturer

The MT28EW01GABA1HJS-0SIT is manufactured by Micron Technology, Inc. Micron is a global leader in memory and storage solutions, specializing in the production of DRAM, NAND flash memory, and storage technologies. Founded in 1978 and headquartered in Boise, Idaho, Micron serves a wide range of industries, including computing, mobile, automotive, and consumer electronics. The company focuses on innovation and quality, providing products that enhance the performance and reliability of electronic devices. Micron is known for its commitment to advancing memory and storage technology to meet the evolving demands of the digital world.

Application

The MT28EW01GABA1HJS-0SIT is a NAND flash memory device primarily used in embedded systems, consumer electronics, and portable devices. Its application areas include smartphones, tablets, automotive infotainment systems, IoT devices, and industrial equipment, where reliable data storage and fast access speeds are critical. Additionally, it can be utilized in wearables and smart home devices, supporting a variety of multimedia and data-intensive applications.

Equivalent

The MT28EW01GABA1HJS-0SIT chip is a 1Gb NOR Flash memory from Micron. Equivalent products include the Spansion S25FL032P, Winbond W25Q32JV, and Macronix MX25L3235F. Always verify specifications such as voltage, speed, and memory organization for compatibility in specific applications.

Versand

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Versandgebührenreferenz (DHL/FedEx):

DHL: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 2-5 Werktagen.

von FedEx: Versandkosten reichen von $25-$40 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

EMS: Versandkosten reichen von $30-$50 (0.5kg), mit einer geschätzten Lieferzeit von 7-15 Werktagen.

Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.

Zahlungen

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