MT28EW128ABA1HPN-0SIT

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MT28EW128ABA1HPN-0SIT

IC FLASH 128MBIT PAR 56VFBGA

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Spezifikationen

Part Status Obsolete
DigiKey Programmable Not Verified
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NOR
Memory Size 128Mbit
Memory Organization 16M x 8, 8M x 16
Memory Interface Parallel
Write Cycle Time - Word, Page 60ns
Access Time 95 ns
Voltage - Supply 2.7V ~ 3.6V
Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount
Package / Case 56-VFBGA
Supplier Device Package 56-VFBGA (7x9)
Base Product Number MT28EW128

Übersicht

Description

The MT28EW128ABA1HPN-0SIT is a 128 Mb (16 MB) NOR Flash memory device from Micron Technology, specifically designed for high-performance embedded applications. It utilizes a single 3V power supply and offers a range of features tailored for various uses, including code storage, execution-in-place (XIP), and data storage.
Key specifications include a fast access time, typically around 90 ns, and high-speed programming and erasing capabilities. The device comes with a parallel interface, allowing for easy integration into existing systems. With a robust architecture, it supports multiple memory sectors, enabling flexible memory management and efficient data handling.
Additionally, the MT28EW128ABA1HPN-0SIT is built for reliability, featuring advanced error correction and protection mechanisms, making it suitable for automotive, industrial, and consumer electronics applications. Its compatibility with various system architectures enhances its versatility in different design environments. Overall, it’s an ideal solution for applications requiring durable, high-speed memory.

Features

The MT28EW128ABA1HPN-0SIT is a high-performance NAND flash memory device manufactured by Micron Technology. It features a storage capacity of 128 megabits (16 megabytes) and is designed for embedded applications. Key features include:
1. Interface: It utilizes a Serial Peripheral Interface (SPI) for efficient communication with host devices.
2. Speed: Offers high-speed read and write operations, supporting faster data access and processing.
3. Endurance: Provides a typical program/erase cycle endurance of up to 10,000 cycles, suitable for applications requiring frequent updates.
4. Data Retention: Maintains data integrity with a retention period of up to 20 years under normal operating conditions.
5. Low Power Consumption: Designed for low power operation, making it suitable for battery-powered applications.
6. Array Architecture: Features a page-based architecture that allows for efficient data management and storage.
This device is ideal for use in industrial, automotive, and consumer electronics applications where reliability and efficiency are paramount.

Package

The MT28EW128ABA1HPN-0SIT is packaged in a 8-ball CSP (Chip Scale Package) format. This type of packaging is compact and designed for high-density applications, suitable for space-constrained environments.

Pinout

The MT28EW128ABA1HPN-0SIT is a NAND flash memory device manufactured by Micron Technology. It features a pin count of 48 pins. This device is designed for high-density storage applications.
The primary functions of the MT28EW128ABA1HPN-0SIT include data storage and retrieval. It uses a page-oriented architecture for efficient data writing and reading, and it supports features such as program, erase, and read operations. The device is typically used in various applications, including consumer electronics, industrial devices, and as storage in embedded systems.
For specific pin functions, the device includes power supply pins (Vcc, Vss), control pins (CE, WE, RE), data pins (DQ0-DQ7), and additional pins for operations like chip enable and write enable, which facilitate communication with the host system.

Manufacturer

The manufacturer of the MT28EW128ABA1HPN-0SIT is Micron Technology, Inc. Micron is a large American company specialized in semiconductor manufacturing, particularly in memory and storage solutions. Founded in 1978 and headquartered in Boise, Idaho, Micron produces a range of products, including DRAM, NAND flash memory, and other advanced memory technologies used in various applications such as smartphones, computers, servers, and automotive systems. The company is one of the leading players in the global semiconductor industry, focusing on innovation and the development of high-performance memory solutions.

Application

The MT28EW128ABA1HPN-0SIT is a NAND Flash memory device commonly used in embedded systems, consumer electronics, and industrial applications. Its application areas include data storage in smartphones, tablets, automotive systems, and IoT devices. It supports firmware storage, multimedia content, and application data in various devices requiring reliable, high-performance non-volatile storage solutions.

Equivalent

The MT28EW128ABA1HPN-0SIT chip is a NAND flash memory device. Equivalent products may include other NAND flash chips with similar specifications from manufacturers like Micron, Samsung, and SanDisk. Specific equivalents can vary by application and requirements; typically, you might look for parts like Micron MT29F128G08CBAB, Samsung K9GAG08U0M, or similar high-density NAND flash devices. Always verify electrical characteristics and pin configurations for compatibility.

Versand

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Versandgebührenreferenz (DHL/FedEx):

DHL: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 2-5 Werktagen.

von FedEx: Versandkosten reichen von $25-$40 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

EMS: Versandkosten reichen von $30-$50 (0.5kg), mit einer geschätzten Lieferzeit von 7-15 Werktagen.

Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.

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