MT29F2G08ABAEAH4-ITX:E

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MT29F2G08ABAEAH4-ITX:E

IC FLASH 2GBIT PARALLEL 63VFBGA

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Spezifikationen

Part Status Obsolete
Base Product Number MT29F2G08
DigiKey Programmable Not Verified
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NAND
Memory Size 2Gbit
Memory Organization 256M x 8
Memory Interface Parallel
Voltage - Supply 2.7V ~ 3.6V
Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount
Package 63-VFBGA
Supplier Device Package 63-VFBGA (9x11)
Packaging Tray

Übersicht

Description

The MT29F2G08ABAEAH4-ITX:E is a NAND flash memory chip manufactured by Micron Technology. It features a 2GB storage capacity and is designed for applications requiring high-density memory solutions. This particular model utilizes a 1.8V I/O voltage, offering a balance between performance and power efficiency.
The chip employs advanced NAND flash technology, enabling fast read and write speeds, making it suitable for mobile devices, consumer electronics, and industrial applications. Its architecture supports efficient data management with error correction capabilities, enhancing reliability and data integrity.
The “ITX” designation indicates a specific temperature range and packaging suitable for industrial use, while the “E” suffix typically denotes compliance with environmental standards. Overall, the MT29F2G08ABAEAH4-ITX:E is a versatile memory solution, well-suited for applications where space, power efficiency, and performance are critical.

Features

The MT29F2G08ABAEAH4-ITX:E is a 2Gb NAND flash memory chip from Micron Technology. It features:
1. Density: 2 Gigabits (256 Megabytes).
2. Technology: NAND flash with a 2-bit per cell (MLC) architecture.
3. Interface: ONFI (Open NAND Flash Interface) compliant, allowing for high-speed data transfer.
4. Page Size: Typically, 8 KB or 16 KB, which supports efficient data management.
5. Block Size: 128 KB or 256 KB blocks, enhancing erase efficiency.
6. Endurance: Supports a high number of program/erase cycles, usually around 10,000 cycles.
7. Data Retention: Designed for long-term data retention, typically around 10 years at 25°C.
8. Low Power Consumption: Optimized for energy efficiency, making it suitable for mobile and embedded applications.
9. Temperature Range: Industrial grade, designed to operate in harsh environments.
This chip is ideal for various applications, including smartphones, tablets, and other consumer electronics, where reliable and fast storage is essential.

Package

The MT29F2G08ABAEAH4-ITX:E is a NAND flash memory device packaged in a TSOP (Thin Small Outline Package) form factor. This package type is designed for compact size and high density, suitable for various applications in consumer electronics and embedded systems.

Pinout

The MT29F2G08ABAEAH4-ITX:E is a NAND Flash memory device with a pin count of 48 pins. It features a standard TSOP (Thin Small Outline Package) configuration. This device primarily functions as non-volatile storage, providing high-density data storage solutions for various applications, including consumer electronics, mobile devices, and embedded systems.
Key functions include:
1. Data Storage: Stores user data and firmware.
2. Read/Write Operations: Supports random access for reading and writing data.
3. Erase Operations: Allows for block-level erasing of data.
4. Interface: Operates via a synchronous or asynchronous interface for communication with the host system.
The device typically supports features like on-chip ECC (Error Correction Code) for data integrity and has a specified endurance and retention life, making it suitable for demanding applications.

Manufacturer

The manufacturer of the MT29F2G08ABAEAH4-ITX:E is Micron Technology, Inc. Micron is a global leader in the semiconductor industry, specializing in memory and storage solutions. The company designs and manufactures a range of products, including DRAM, NAND flash memory, and solid-state drives (SSDs), serving various sectors such as computing, mobile, automotive, and industrial markets. Founded in 1978 and headquartered in Boise, Idaho, Micron is recognized for its innovation in memory technologies and its commitment to advancing data storage solutions to meet the growing demands of modern applications.

Application

The MT29F2G08ABAEAH4-ITX:E is a NAND flash memory device commonly used in applications such as mobile devices, consumer electronics, automotive systems, solid-state drives (SSDs), and industrial equipment. Its high storage capacity and performance make it suitable for data storage, multimedia applications, and firmware updates in embedded systems.

Equivalent

The MT29F2G08ABAEAH4-ITX:E NAND flash memory chip can have equivalent products from other manufacturers, such as:
1. Samsung K9GAG08U0M (2Gb NAND)
2. Toshiba TH58NVG2D2LL (2Gb NAND)
3. SK Hynix H26M31003GTR (2Gb NAND)
Always verify compatibility and specifications based on your application requirements.

Versand

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bieten Sie globale Versanddienstleistungen durch DHL, FedEx, TNT, UPS oder einen anderen Spediteur Ihrer Wahl.


Versandgebührenreferenz (DHL/FedEx):

DHL: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 2-5 Werktagen.

von FedEx: Versandkosten reichen von $25-$40 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

EMS: Versandkosten reichen von $30-$50 (0.5kg), mit einer geschätzten Lieferzeit von 7-15 Werktagen.

Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.

Zahlungen

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