MT29F2G08ABBEAH4-IT:E

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MT29F2G08ABBEAH4-IT:E

IC FLASH 2GBIT PARALLEL 63VFBGA

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Spezifikationen

Part Status Last Time Buy
Base Product Number MT29F2G08
DigiKey Programmable Verified
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NAND
Memory Size 2Gbit
Memory Organization 256M x 8
Memory Interface Parallel
Voltage - Supply 1.7V ~ 1.95V
Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount
Package 63-VFBGA
Supplier Device Package 63-VFBGA (9x11)
Packaging Tray

Übersicht

Description

The MT29F2G08ABBEAH4-IT:E is a NAND flash memory chip produced by Micron Technology. It features a capacity of 2 gigabits, organized as 256MB of NAND flash memory. This device is designed primarily for embedded applications, providing high-density storage with low power consumption.
It utilizes the ONFI (Open NAND Flash Interface) standard, ensuring compatibility with various controllers and systems. The chip operates in a range of temperatures and supports multiple programming and erasing cycles, making it suitable for consumer electronics, automotive, and industrial applications.
Key features include a synchronous interface, advanced error correction, and support for page and block programming, which optimize performance and reliability. The MT29F2G08ABBEAH4-IT:E is part of Micron's extensive NAND flash portfolio, known for its scalability and efficiency in data storage solutions.

Features

The MT29F2G08ABBEAH4-IT:E is a NAND flash memory device from Micron Technology, featuring 2Gb (2 Gigabits) capacity. Key specifications include:
- Architecture: 2-plane architecture for improved performance and efficiency in data access.
- Interface: ONFI (Open NAND Flash Interface) compliant, enabling compatibility with various controllers.
- Organization: 2048 pages of 8KB each, with an additional 64 bytes for spare area per page.
- Endurance: Typically supports 3,000 program/erase cycles, providing reliability for data storage.
- Data retention: Offers a minimum retention period of 10 years at 25°C.
- Power consumption: Low power operation, ideal for battery-powered devices.
- Temperature range: Industrial temperature grade (-40°C to +85°C), suitable for harsh environments.
This device is commonly used in applications such as mobile devices, consumer electronics, and industrial equipment, requiring high-density and reliable non-volatile storage solutions.

Package

The MT29F2G08ABBEAH4-IT:E is packaged in a 48-ball FBGA (Fine Ball Grid Array) format. This type of packaging is commonly used for memory devices, providing a compact layout and efficient thermal performance.

Pinout

The MT29F2G08ABBEAH4-IT:E is a NAND flash memory device from Micron Technology. It features a pin count of 48 pins.
The device functions primarily as non-volatile storage, providing high-density memory with a 2 Gb (gigabit) capacity. It utilizes a toggle mode NAND interface for fast data transfer rates. The key functions of its pins include:
1. Data I/O Pins (DQ0-DQ7): For bidirectional data transfer.
2. Control Pins: Such as CE# (Chip Enable), RE# (Read Enable), and WE# (Write Enable) to control memory operations.
3. Address Pins (A0-A25): For addressing the memory locations.
4. Ready/Busy Pin (R/B#): Indicates the status of the memory operation.
5. VCC and VSS: Power supply and ground.
This device is typically used in applications like mobile devices, consumer electronics, and embedded systems where compact, reliable storage is essential.

Manufacturer

The manufacturer of the MT29F2G08ABBEAH4-IT:E is Micron Technology, Inc. Micron is a global leader in memory and storage solutions, specializing in DRAM, NAND flash memory, and other advanced semiconductor technologies. Founded in 1978 and headquartered in Boise, Idaho, Micron primarily serves markets such as consumer electronics, computing, mobile devices, and automotive applications. The company is known for its innovations in memory and storage products, contributing significantly to the advancement of technology in various sectors. Micron's offerings include memory modules, solid-state drives (SSDs), and embedded memory solutions, making it a key player in the semiconductor industry.

Application

The MT29F2G08ABBEAH4-IT:E is a NAND flash memory chip commonly used in applications such as mobile devices, solid-state drives (SSDs), tablets, and embedded systems. Its high storage capacity and performance make it suitable for data-intensive applications like digital cameras, automotive systems, and consumer electronics. Additionally, it is used in industrial applications for data logging and firmware storage.

Equivalent

The MT29F2G08ABBEAH4-IT:E is a 2Gb NAND Flash memory chip. Equivalent products include:
1. Samsung K9GAG08U0M
2. Toshiba TH58TFT2S8F
3. Micron MT29F2G08AAC
4. Hynix H27UBG8T2C
Ensure compatibility in specifications such as density, interface, and package type before substituting.

Versand

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bieten Sie globale Versanddienstleistungen durch DHL, FedEx, TNT, UPS oder einen anderen Spediteur Ihrer Wahl.


Versandgebührenreferenz (DHL/FedEx):

DHL: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 2-5 Werktagen.

von FedEx: Versandkosten reichen von $25-$40 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

EMS: Versandkosten reichen von $30-$50 (0.5kg), mit einer geschätzten Lieferzeit von 7-15 Werktagen.

Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.

Zahlungen

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