MT29F4G08ABBEAH4-IT:E

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MT29F4G08ABBEAH4-IT:E

IC FLASH 4GBIT PARALLEL 63VFBGA

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  • Fr. Teil #MT29F4G08ABBEAH4-IT:E
  • Paket VFBGA-63
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Spezifikationen

Package Bulk
ProductStatus Obsolete
MemoryType Non-Volatile
MemoryFormat FLASH
Technology FLASH - NAND
MemorySize 4Gb (512M x 8)
MemoryInterface Parallel
Voltage-Supply 1.7V ~ 1.95V
OperatingTemperature -40°C ~ 85°C (TA)
MountingType Surface Mount
Package/Case 63-VFBGA

Übersicht

Description

MT29F4G08ABBEAH4-IT:E is Micron’s 4‑Gbit NAND flash memory device (roughly 512 MB raw) with an x8 data interface. It is a Multi-Level Cell (MLC) NAND designed for embedded storage and boot media in industrial and consumer products. The device follows the ONFI (and related) command set and is typically operated with a controller that handles wear leveling and ECC.
Key points:
- Density/organization: ~4 Gbit NAND, x8 I/O, multi-plane architecture
- Interface/voltage: ONFI-compatible interface; I/O voltage around 3.3 V (core ≈ 1.8 V)
- Temperature/packaging: IT:E suffix indicates industrial/extended temperature grade
- Operations: standard NAND read, program, and erase at page/block granularity; supports multi-plane and various read modes
- Use: requires a flash controller to manage ECC, bad-block management, and wear leveling
For exact page size, block size, timing, endurance, and electrical specs, consult the MT29F4G08ABBEAH4-IT:E datasheet.

Features

MT29F4G08ABBEAH4-IT:E is Micron’s 4 Gbit NAND Flash (industrial temp). Key features:
- Capacity: 4 Gbit (512 MB) raw
- Interface: asynchronous, x8 I/O; ONFI-compliant
- Organization: 2 KB pages; typical 128-page blocks (256 KB per block)
- Performance features: multi-plane/multi-bank operation for higher throughput
- Reliability: built-in bad-block management, wear leveling, and ECC support
- ECC: hardware BCH ECC (supports external ECC schemes)
- Endurance/Retention: P/E cycles in the low thousands (ergodic wear with ECC); data retention rated for long-term use
- Voltage/Temp: 3.3V operation; industrial temp range typically -40°C to 85°C
- Packaging: suitable for embedded/SSD applications requiring rugged performance
Note: exact page/Block sizes and endurance can vary by revision; verify the specific datasheet for precise numbers.

Package

It uses a 48-ball FBGA (flip-chip ball-grid array) package.

Pinout

- Pin count: 48 pins (NAND flash TSOP/similar 48‑pin package).
- Function: 4 Gbit NAND flash memory with a parallel x8 data bus (non-volatile storage; asynchronous NAND interface).

Manufacturer

- Manufacturer: Micron Technology, Inc.
- What kind of company: An American multinational semiconductor company that designs and manufactures memory and storage products, including DRAM and NAND flash, and is one of the world’s largest memory manufacturers.

Application

MT29F4G08ABBEAH4-IT:E is a 4 Gbit NAND flash with industrial temperature (-40 to 85°C). Typical applications:
- Embedded systems and microcontroller-based devices (industrial control, IoT gateways)
- Automotive and rugged electronics (instrument clusters, infotainment, telematics)
- Consumer electronics (digital cameras, camcorders, portable media players)
- Firmware storage and data logging
- NAND-based storage modules (USB drives, SD/memory cards, small SSD subsystems) for wide-temp environments

Versand

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Versandgebührenreferenz (DHL/FedEx):

DHL: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 2-5 Werktagen.

von FedEx: Versandkosten reichen von $25-$40 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

EMS: Versandkosten reichen von $30-$50 (0.5kg), mit einer geschätzten Lieferzeit von 7-15 Werktagen.

Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.

Zahlungen

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