MT29F8G08ABABAWP:B

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MT29F8G08ABABAWP:B

IC FLASH 8GBIT PARALLEL 48TSOP I

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Spezifikationen

Part Status Obsolete
Base Product Number MT29F8G08
DigiKey Programmable Verified
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NAND
Memory Size 8Gbit
Memory Organization 1G x 8
Memory Interface Parallel
Voltage - Supply 2.7V ~ 3.6V
Operating Temperature 0°C ~ 70°C (TA)
Mounting Type Surface Mount
Package 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package 48-TSOP I
Packaging Tray

Übersicht

Description

The MT29F8G08ABABAWP:B is a NAND flash memory device manufactured by Micron Technology. It features an 8 Gb (gigabit) capacity, making it suitable for various applications such as smartphones, tablets, and solid-state drives (SSDs). This device operates with a single power supply and supports various data transfer modes, ensuring efficient read and write operations.
Key characteristics include a page size typically of 2048 bytes and the ability to manage multiple data operations simultaneously, which enhances performance. The device utilizes a synchronous interface for high-speed data transfer and is designed for robust reliability, featuring error correction capabilities.
Due to its compact design and efficiency, the MT29F8G08ABABAWP:B is ideal for use in consumer electronics and industrial applications, providing a reliable solution for data storage needs. Its specifications and design are optimized to meet the demands of modern data-intensive applications.

Features

The MT29F8G08ABABAWP:B is a NAND Flash memory chip produced by Micron Technology. Key features include:
1. Density: 8 Gb (1 GB) storage capacity.
2. Interface: Supports ONFI (Open NAND Flash Interface) standards, ensuring compatibility with various controllers.
3. Process Technology: Built on advanced NAND technology for improved performance and reliability.
4. Page Size: Typically features a page size of 4 KB, with additional spare area for error correction.
5. Block Size: Organized into blocks, usually comprising 128 pages per block.
6. Read/Write Speed: Offers high-speed read and write operations, enhancing data transfer efficiency.
7. Endurance: Designed for high endurance with a specified number of program/erase cycles, typically around 3,000 to 10,000.
8. Power Management: Low power consumption, making it suitable for mobile and embedded applications.
9. Temperature Range: Operates within a wide temperature range, accommodating various environmental conditions.
Ideal applications include smartphones, tablets, and other consumer electronics requiring efficient storage solutions.

Package

The MT29F8G08ABABAWP:B is packaged in a TSOP (Thin Small Outline Package) type, specifically a 48-pin TSOP package. This design allows for efficient space utilization and is commonly used in memory devices.

Pinout

The MT29F8G08ABABAWP:B is a NAND Flash memory device with a total of 48 pins. This device is part of Micron's NAND Flash product family and is used for data storage in various applications.
Key pin functions include:
1. Data Pins (DQ0-DQ7): These are used for data input and output.
2. Command Pins (WE, RE, CE): Control read, write, and chip enable operations.
3. Address Pins (A0-A21): Used for addressing the memory array.
4. Control Pins (WP, R/B): Write protect and ready/busy status indicator.
5. VCC and GND: Power supply and ground connections.
The device supports features like page reads/writes and block management, making it suitable for embedded systems and consumer electronics.

Manufacturer

The manufacturer of the MT29F8G08ABABAWP:B is Micron Technology, Inc. Micron is an American multinational company that specializes in the production of semiconductor devices, particularly memory and storage solutions. Founded in 1978 and headquartered in Boise, Idaho, Micron is one of the largest producers of DRAM (Dynamic Random Access Memory) and NAND flash memory, which are essential components in various electronic devices, including smartphones, computers, and data centers. The company is recognized for its innovation in memory technologies and plays a significant role in the global semiconductor industry.

Application

The MT29F8G08ABABAWP:B is a NAND flash memory device commonly used in embedded applications, consumer electronics, and mobile devices. It is suitable for data storage in smartphones, tablets, digital cameras, solid-state drives (SSDs), and industrial automation systems. Its high density and performance make it ideal for applications requiring reliable and fast non-volatile storage solutions.

Equivalent

The MT29F8G08ABABAWP:B chip, a NAND flash memory device, can have equivalent products from other manufacturers like Samsung (K9GAG08U0M) and Toshiba (TC58NVG2S0H). Additionally, Micron's other NAND variants might serve as alternatives. Always check specifications for compatibility, including voltage, density, and package type.

Versand

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Versandgebührenreferenz (DHL/FedEx):

DHL: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 2-5 Werktagen.

von FedEx: Versandkosten reichen von $25-$40 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

EMS: Versandkosten reichen von $30-$50 (0.5kg), mit einer geschätzten Lieferzeit von 7-15 Werktagen.

Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.

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