MT40A1G16KNR-075:E

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MT40A1G16KNR-075:E

IC DRAM 16GBIT PAR 96FBGA

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Spezifikationen

Part Status Obsolete
Base Product Number MT40A1G16
DigiKey Programmable Not Verified
Memory Type Volatile
Memory Format DRAM
Technology SDRAM - DDR4
Memory Size 16Gbit
Memory Organization 1G x 16
Memory Interface Parallel
Clock Frequency 1.33 GHz
Write Cycle Time - Word, Page 15ns
Voltage - Supply 1.14V ~ 1.26V
Operating Temperature 0°C ~ 95°C (TC)
Mounting Type Surface Mount
Package 96-TFBGA
Supplier Device Package 96-FBGA (7.5x13.5)
Packaging Tray
Access Time 19 ns

Übersicht

Description

The MT40A1G16KNR-075:E is a DRAM (Dynamic Random Access Memory) module from Micron Technology, designed for high-performance applications. It features a density of 1GB and uses a 16-bit wide data bus, making it suitable for systems that require efficient data handling and processing. Operating at a voltage of 1.5V, it supports DDR3 technology, allowing for faster data rates compared to previous generations.
This memory module is commonly used in various electronic devices, including computers, servers, and mobile devices. The "-075" in the part number indicates a specific speed grade, typically referring to its performance characteristics, such as data transfer speeds and latency. The "E" at the end signifies that the part is an environmental version, often implying that it is optimized for specific operational conditions.
Overall, the MT40A1G16KNR-075:E is designed for reliability and efficiency, making it a popular choice for modern computing needs.

Features

The MT40A1G16KNR-075:E is a 1GB DDR3 SDRAM memory module manufactured by Micron Technology. Here are its key features:
1. Type: DDR3 SDRAM, which offers improved speed and efficiency compared to previous DDR generations.
2. Capacity: 1GB, suitable for various applications, including embedded systems and consumer electronics.
3. Speed: Operates at a frequency of 800 MHz, allowing for a data rate of 1600 MT/s.
4. Organization: 16 Meg x 8 configuration, which contributes to its performance and efficiency.
5. Voltage: Operates at 1.5V, providing lower power consumption, which is beneficial for battery-powered devices.
6. Form Factor: Typically available in a standard package size suitable for mounting on PCBs.
7. Applications: Commonly used in laptops, desktops, and embedded systems due to its balance of capacity, speed, and power efficiency.
This memory module is designed for reliability and performance in a variety of electronic applications.

Package

The MT40A1G16KNR-075:E is packaged in a 78-ball TFBGA (Thin Fine Pitch Ball Grid Array) form factor. This package type is designed for compactness and efficient thermal and electrical performance in memory applications.

Pinout

The MT40A1G16KNR-075:E is a 1 Gb DDR3 SDRAM memory chip manufactured by Micron Technology. It features a 78-ball FBGA (Fine Ball Grid Array) package. The pin count is 78 balls.
The main functions of the pins include power supply (VDD and VSS), data input/output (DQ pins), address inputs (A pins), control signals (such as RAS, CAS, WE, and CS), clock inputs (CLK and CLK), and various other signals for functionality and configuration, including the mode register set (MRS) and chip select (CS) lines.
This device operates at a frequency of 1333 MT/s (mega-transfers per second) and is designed for high-performance applications in computing and networking.

Manufacturer

The manufacturer of the MT40A1G16KNR-075:E is Micron Technology, Inc. Micron is a leading American semiconductor company that specializes in the design and manufacturing of memory and storage solutions, including DRAM, NAND flash memory, and solid-state drives (SSDs). Founded in 1978 and headquartered in Boise, Idaho, Micron plays a crucial role in the semiconductor industry, serving various markets such as computing, mobile devices, automotive, and data centers. The company is known for its innovation and high-performance memory products, contributing to advancements in technology and computing capabilities across different applications.

Application

The MT40A1G16KNR-075:E is a DDR3 SDRAM memory module commonly used in applications such as consumer electronics (smartphones, tablets), laptops, and desktop computers. It is suitable for high-performance computing, gaming, networking devices, and embedded systems where efficient data processing and storage are essential. Its low power consumption and high-speed capabilities make it ideal for mobile applications and energy-sensitive devices.

Equivalent

The MT40A1G16KNR-075:E is a mobile DDR3 SDRAM memory chip. Equivalent products may include other mobile DDR3 chips with similar specifications, such as those from manufacturers like Samsung (K4B4G1646F), Hynix (H5TQ4G83AFR), and Micron's other variants. Be sure to match key specifications such as density, package type, speed, and voltage for compatibility. Always consult the manufacturer's datasheets for detailed comparisons.

Versand

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bieten Sie globale Versanddienstleistungen durch DHL, FedEx, TNT, UPS oder einen anderen Spediteur Ihrer Wahl.


Versandgebührenreferenz (DHL/FedEx):

DHL: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 2-5 Werktagen.

von FedEx: Versandkosten reichen von $25-$40 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

EMS: Versandkosten reichen von $30-$50 (0.5kg), mit einer geschätzten Lieferzeit von 7-15 Werktagen.

Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.

Zahlungen

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