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MT40A1G8SA-062E:R
IC DRAM 8GBIT PARALLEL 78FBGA
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- Fr. Teil #MT40A1G8SA-062E:R
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Spezifikationen
| Part Status | Obsolete |
| Base Product Number | MT40A1G8 |
| DigiKey Programmable | Not Verified |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - DDR4 |
| Memory Size | 8Gbit |
| Memory Organization | 1G x 8 |
| Memory Interface | Parallel |
| Clock Frequency | 1.6 GHz |
| Write Cycle Time - Word, Page | 15ns |
| Voltage - Supply | 1.14V ~ 1.26V |
| Operating Temperature | 0°C ~ 95°C (TC) |
| Mounting Type | Surface Mount |
| Package | 78-TFBGA |
| Supplier Device Package | 78-FBGA (7.5x11) |
| Packaging | Bulk |
| Access Time | 19 ns |
Übersicht
Description
The "A1" in the part number indicates a specific die revision, while the "G8" denotes a specific technology node. The "SA" refers to the component's organization and type. The suffix "062E" represents the package type and design specifications, which can include dimensions and pin layout. The "R" at the end often indicates that it is a lead-free, RoHS-compliant version.
This memory chip is primarily used in servers, desktops, and laptops, offering improved efficiency, speed, and power management compared to previous DDR generations, making it suitable for modern computing demands.
Features
1. Type: DDR3L SDRAM (Low Voltage)
2. Density: 1GB (Gigabyte)
3. Organization: 8 bits x 8 banks
4. Voltage: Operates at 1.35V, allowing for lower power consumption compared to standard DDR3.
5. Speed: Supports data rates up to 1600 MT/s (megatransfers per second).
6. Package: Available in a small BGA (Ball Grid Array) package for efficient space utilization on circuit boards.
7. Thermal and Power Management: Features help optimize power efficiency, suitable for battery-operated devices.
8. Applications: Ideal for smartphones, tablets, and other mobile computing devices.
This memory chip provides a balance of performance and energy efficiency, making it suitable for modern mobile applications.
Package
Pinout
The primary function of this memory chip is to provide high-speed volatile memory storage for various electronic devices, including computers, servers, and mobile devices. It operates at a voltage of 1.5V and supports a data rate of up to 1600 MT/s, making it suitable for applications requiring efficient data transfer rates.
The chip's architecture allows for a wide variety of configurations, supporting features like burst lengths, bank groups, and various modes of operation to optimize performance in systems that demand rapid data access and processing.
Manufacturer
Application
Equivalent
1. Hynix H5TQ4G63AFR
2. Samsung K4B4G1646C
3. Micron MT41K256M16HA-125
Ensure to verify the specifications like density, speed, and voltage to confirm compatibility.
Versand
VersandmethodenWir
bieten Sie globale Versanddienstleistungen durch DHL, FedEx, TNT, UPS oder einen anderen Spediteur Ihrer Wahl.
Versandgebührenreferenz (DHL/FedEx):
DHL: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 2-5 Werktagen.
von FedEx: Versandkosten reichen von $25-$40 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.
UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.
TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.
EMS: Versandkosten reichen von $30-$50 (0.5kg), mit einer geschätzten Lieferzeit von 7-15 Werktagen.
Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.
Zahlungen
Payment Methods
Die Zahlungsfrist ist 100% Prepaid.
Derzeit akzeptieren wir nur die folgenden Zahlungsmethoden:
1. PayPal
2. Kredit- / Debitkarte
3. Überweisung
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