MT40A2G16TBB-062E:F

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MT40A2G16TBB-062E:F

IC DRAM 32GBIT PARALLEL 96FBGA

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Spezifikationen

Series TwinDie™
Part Status Obsolete
Base Product Number MT40A2G16
DigiKey Programmable Not Verified
Memory Type Volatile
Memory Format DRAM
Technology SDRAM - DDR4
Memory Size 32Gbit
Memory Organization 2G x 16
Memory Interface Parallel
Clock Frequency 1.6 GHz
Voltage - Supply 1.14V ~ 1.26V
Operating Temperature 0°C ~ 95°C (TC)
Mounting Type Surface Mount
Package 96-TFBGA
Supplier Device Package 96-FBGA (7.5x13)
Packaging Tray
Access Time 13.75 ns

Übersicht

Description

The MT40A2G16TBB-062E:F is a DRAM (Dynamic Random Access Memory) component manufactured by Micron Technology. Specifically, it is a DDR4 (Double Data Rate 4) SDRAM (Synchronous Dynamic Random Access Memory) module. This part features a 2GB capacity, organized in a dual rank configuration with a 16-bit I/O interface. It operates at a voltage of 1.2V, which helps improve energy efficiency compared to previous generations.
The "F" suffix indicates that the module is designed for use in various applications, including computing, networking, and consumer electronics, and complies with industry standards for performance and reliability. This memory is suitable for high-speed data processing, making it ideal for modern computing environments that require efficient memory solutions for tasks like gaming, data analysis, and multitasking. With a data transfer rate of up to 2400 MT/s, it offers improved bandwidth and lower latency.

Features

The MT40A2G16TBB-062E:F is a DDR3 SDRAM memory chip produced by Micron Technology. It features a capacity of 2 Gigabits (GB) organized as 2 x 16 bits, making it suitable for various applications, including mobile devices, networking equipment, and other embedded systems.
Key features include:
- Data Rate: Supports data rates up to 1600 MT/s (megatransfers per second).
- Voltage Supply: Operates at a voltage of 1.5V (±0.075V), which ensures compatibility with standard DDR3 systems.
- Package Type: Offered in a 78-ball TFBGA (Thin Fine Pitch Ball Grid Array) package, which aids in compact designs.
- Temperature Range: Designed for industrial temperature ranges, ensuring reliability in diverse environments.
- Access Time: Offers fast access times, improving system performance.
This chip is suitable for applications requiring a balance of performance and power efficiency.

Package

The MT40A2G16TBB-062E:F is packaged in a 78-ball FBGAs (Fine Pitch Ball Grid Array) form factor. This type of package is designed for high-density applications, providing efficient thermal management and electrical performance.

Pinout

The MT40A2G16TBB-062E:F is a 2Gb DDR3 SDRAM memory device from Micron Technology. It has a pin count of 78, packaged in a TFBGA (Thin Fine Ball Grid Array) configuration.
In terms of functionality, this memory module operates at a data rate of 1600 MT/s (megatransfers per second) and supports a 1.5V supply voltage. It features a x16 data width and is designed for use in various applications, including consumer electronics, networking equipment, and computer systems. Its architecture includes an 8-bank structure, which allows for efficient data access, and it supports burst lengths of 8 and 4.
Overall, the MT40A2G16TBB-062E:F is optimized for high performance and low power consumption, making it suitable for a wide range of applications in the modern computing landscape.

Manufacturer

The manufacturer of the MT40A2G16TBB-062E:F is Micron Technology, Inc. Micron is a leading American producer of semiconductor memory and storage solutions, specializing in dynamic random-access memory (DRAM), NAND flash memory, and other memory technologies. Founded in 1978 and headquartered in Boise, Idaho, Micron serves a wide range of industries, including computing, mobile, automotive, and industrial applications. The company is recognized for its innovation and contributions to memory technology, playing a crucial role in the development of high-performance computing and data storage solutions.

Application

The MT40A2G16TBB-062E:F is a DDR3 SDRAM memory chip typically used in applications such as smartphones, tablets, laptops, desktop computers, and other embedded systems. It is designed for high-performance computing, enabling efficient data processing and multitasking in consumer electronics, networking equipment, and automotive systems. Its low power consumption and high-speed capabilities make it suitable for energy-efficient applications as well.

Equivalent

The MT40A2G16TBB-062E:F chip is a DDR3 SDRAM memory chip. Equivalent products include:
1. Hynix H5TQ2G83EFR - DDR3 SDRAM
2. Samsung K4B4G1646F-BCK0 - DDR3 SDRAM
3. Micron MT41K256M16HA-125 - DDR3 SDRAM
Ensure compatibility in terms of speed, voltage, and configuration when selecting alternatives.

Versand

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bieten Sie globale Versanddienstleistungen durch DHL, FedEx, TNT, UPS oder einen anderen Spediteur Ihrer Wahl.


Versandgebührenreferenz (DHL/FedEx):

DHL: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 2-5 Werktagen.

von FedEx: Versandkosten reichen von $25-$40 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

EMS: Versandkosten reichen von $30-$50 (0.5kg), mit einer geschätzten Lieferzeit von 7-15 Werktagen.

Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.

Zahlungen

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