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MT41K128M8DA-107:J
IC DRAM 1GBIT PAR 78FBGA
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Spezifikationen
| Part Status | Last Time Buy |
| Base Product Number | MT41K128M8 |
| DigiKey Programmable | Not Verified |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - DDR3L |
| Memory Size | 1Gbit |
| Memory Organization | 128M x 8 |
| Memory Interface | Parallel |
| Clock Frequency | 933 MHz |
| Voltage - Supply | 1.283V ~ 1.45V |
| Operating Temperature | 0°C ~ 95°C (TC) |
| Mounting Type | Surface Mount |
| Package | 78-TFBGA |
| Supplier Device Package | 78-FBGA (8x10.5) |
| Packaging | Tray |
| Access Time | 20 ns |
Übersicht
Description
The "107" in the part number indicates a specific speed grade, while the "J" signifies a commercial temperature range. The device adheres to JEDEC (Joint Electron Device Engineering Council) specifications, ensuring compatibility with various systems. Its applications include consumer electronics, mobile devices, and embedded systems, where space and power efficiency are crucial. The MT41K128M8DA-107:J supports multiple functionalities, such as burst mode and random access, making it versatile for diverse computing needs.
Features
1. Density: 1GB (1,073,741,824 bits) per DRAM chip.
2. Organization: It has a 128M x 8 architecture, providing 8-bit data output.
3. Speed: Operates at a clock speed of 1.07 GHz (DDR3-1066).
4. Voltage: Operates at a low voltage of 1.5V, which enhances power efficiency.
5. Package Type: Available in a 78-ball TFBGA (Thin Fine Ball Grid Array) package.
6. Data Rate: Supports a data rate of 8.5 GB/s.
7. Features: Includes features like on-die termination (ODT), and support for various memory modes to optimize performance.
This module is suitable for applications requiring reliable, high-performance memory in a compact form factor.
Package
Pinout
- Data I/O Pins: For data transfer (DQ pins).
- Address Pins: For memory addressing (A pins).
- Control Pins: Such as Chip Select (CS), Write Enable (WE), Read Enable (RE), and Clock (CLK) signals.
- Power and Ground Pins: For supplying power (VDD, VDDQ) and grounding (VSS).
- Refresh Pins: For controlling internal refresh cycles.
This device supports high-speed memory operations with a data rate of up to 1600 MT/s (megatransfers per second), making it suitable for various applications in computing and embedded systems.
Manufacturer
Application
Equivalent
1. Hynix H5TQ2G83AFR - 1GB DDR3
2. Samsung K4B4G0846F - 1GB DDR3
3. Micron MT41K128M8JT - 1GB DDR3
Ensure compatibility with your specific application as variations may exist in speed, timing, and voltage.
Versand
VersandmethodenWir
bieten Sie globale Versanddienstleistungen durch DHL, FedEx, TNT, UPS oder einen anderen Spediteur Ihrer Wahl.
Versandgebührenreferenz (DHL/FedEx):
DHL: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 2-5 Werktagen.
von FedEx: Versandkosten reichen von $25-$40 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.
UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.
TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.
EMS: Versandkosten reichen von $30-$50 (0.5kg), mit einer geschätzten Lieferzeit von 7-15 Werktagen.
Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.
Zahlungen
Payment Methods
Die Zahlungsfrist ist 100% Prepaid.
Derzeit akzeptieren wir nur die folgenden Zahlungsmethoden:
1. PayPal
2. Kredit- / Debitkarte
3. Überweisung
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