MT41K512M8RH-125:E

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MT41K512M8RH-125:E

IC DRAM 4GBIT PARALLEL 78FBGA

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Spezifikationen

Part Status Obsolete
Base Product Number MT41K512M8
DigiKey Programmable Not Verified
Memory Type Volatile
Memory Format DRAM
Technology SDRAM - DDR3L
Memory Size 4Gbit
Memory Organization 512M x 8
Memory Interface Parallel
Clock Frequency 800 MHz
Voltage - Supply 1.283V ~ 1.45V
Operating Temperature 0°C ~ 95°C (TC)
Mounting Type Surface Mount
Package 78-TFBGA
Supplier Device Package 78-FBGA (9x10.5)
Packaging Tray
Access Time 13.75 ns

Übersicht

Description

The MT41K512M8RH-125:E is a DDR3 SDRAM memory chip manufactured by Micron Technology. It features a 4 Gb (512 MB x 8) capacity, operates at a speed of 1600 MT/s, and is packaged in a 96-ball FBGA (Fine Pitch Ball Grid Array) format. This memory module is designed for high-performance applications, offering low latency and efficient power consumption (1.5V operating voltage).
Key attributes include a 64-bit data width, providing substantial bandwidth for data-intensive tasks, and support for various functionalities such as burst lengths of 8 and 4. The "125" designation indicates a maximum clock speed of 1250 MHz, while the ":E" suffix signifies that it is RoHS compliant, meaning it is free from hazardous substances.
The MT41K512M8RH-125:E is commonly used in laptops, desktops, servers, and embedded systems, making it suitable for both consumer and industrial applications. Its reliability and performance make it a popular choice for designers seeking robust memory solutions.

Features

The MT41K512M8RH-125:E is a 4Gb (512MB) DDR3 SDRAM memory chip from Micron Technology. It features an 8-bit data width and is organized as 512M x 8, making it suitable for various applications requiring high-density memory solutions. Key specifications include:
- Speed Grade: Operates at DDR3-1600 (PC3-12800) with a maximum data transfer rate of 1600 MT/s.
- Voltage: Operates at a supply voltage of 1.5V.
- Package Type: Offered in a 78-ball FBGA (Fine Ball Grid Array) package.
- Temperature Range: Supports an industrial temperature range of -40°C to +95°C.
- Features: Supports various functionalities like burst modes, and has built-in features for enhanced performance, reliability, and power efficiency.
- Interface: Compliant with the DDR3 SDRAM standard, allowing for integration into a range of devices, including PCs, servers, and embedded systems.
This chip is ideal for applications demanding low power consumption with high performance.

Package

The MT41K512M8RH-125:E is packaged in a 78-ball FBGA (Fine Ball Grid Array) format. This package type is designed for compact, high-density applications, allowing efficient placement on circuit boards.

Pinout

The MT41K512M8RH-125:E is a DRAM memory module from Micron's DDR3 SDRAM series. It has a total pin count of 78.
The primary functions of its pins include:
1. Data Bus (DQ): 8 bi-directional data pins for data transfer.
2. Address Pins (A0-A13): Used for selecting memory locations.
3. Control Pins: Includes Chip Select (CS), Write Enable (WE), and Read Enable (RE) for controlling read and write operations.
4. Clock Signals (CK, CK#): Provide timing signals for synchronization.
5. Power and Ground Pins (VDD, VSS): Supply power and ground connections.
6. Burst Control Signals (BA0, BA1): Select the bank address for operations.
7. Other Control Signals: Such as Reset and Mode Register Set (MRS).
This configuration allows for efficient memory operations in various applications, including computing and mobile devices.

Manufacturer

The manufacturer of the MT41K512M8RH-125:E is Micron Technology, Inc. Micron is an American global leader in the semiconductor industry, specializing in memory and storage solutions. Founded in 1978 and headquartered in Boise, Idaho, Micron produces a variety of products including DRAM, NAND flash memory, and solid-state drives (SSDs). The company serves a wide range of markets, including computing, consumer electronics, mobile devices, and automotive applications. Micron is known for its innovation in memory technology and plays a significant role in the development of next-generation memory solutions, contributing to advancements in data storage and processing efficiency across various industries.

Application

The MT41K512M8RH-125:E is a DDR3 SDRAM memory chip commonly used in applications such as consumer electronics, laptops, desktops, servers, networking equipment, and embedded systems. Its high-density and performance make it suitable for applications requiring fast data processing and large memory capacities, including gaming, multimedia devices, and cloud computing.

Equivalent

The MT41K512M8RH-125:E is a DDR3 SDRAM memory chip. Equivalent products include:
1. Hynix H5TQ2G83AFR - DDR3 4Gb
2. Samsung K4B4G1646E - DDR3 4Gb
3. Micron MT41K512M16HA - DDR3 4Gb
Ensure compatibility with your specific application requirements, as there may be variations in speed, voltage, and package type.

Versand

VersandmethodenWir

bieten Sie globale Versanddienstleistungen durch DHL, FedEx, TNT, UPS oder einen anderen Spediteur Ihrer Wahl.


Versandgebührenreferenz (DHL/FedEx):

DHL: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 2-5 Werktagen.

von FedEx: Versandkosten reichen von $25-$40 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

EMS: Versandkosten reichen von $30-$50 (0.5kg), mit einer geschätzten Lieferzeit von 7-15 Werktagen.

Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.

Zahlungen

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