MT47H128M16RT-25E:C

The MT47H128M16RT-25E:C is a DRAM (Dynamic Random-Access Memory) component produced by Micron Technology. It is a 1 Gigabit (128 Megabytes) DDR3 SDRAM device organized as 8 banks of 16 Meg x 16 bits. This memory chip operates at a 1.5V supply voltage and is optimized for high-performance applications, offering data rates up to 1066 MT/s (megatransfers per second).
Key features include:
- Density: 1Gb (128MB)
- Organization: 8 banks of 16-bit data
- Package: Typically available in a 78-ball FBGA package
- Speed: DDR3 with speeds up to 1066MT/s
- Temperature Range: Commercial grade (0°C to +95°C)
The MT47H128M16RT-25E:C is widely used in consumer electronics, networking equipment, and various embedded applications, where reliable and efficient memory performance is essential. Its configuration and specifications make it suitable for designs requiring moderate capacity and good power efficiency.

The MT47H128M16RT-25E:C is a synchronous dynamic random-access memory (SDRAM) chip from Micron Technology. It features a density of 2 gigabits, organized as 128 Meg x 16 bits. Key specifications include:
- Operating Frequency: Supports speeds up to 800 Mbps, making it suitable for high-performance applications.
- Voltage: Operates at a core voltage of 2.5V, which is standard for DDR2 SDRAM.
- Data Rates: It is compatible with DDR2 and meets the JEDEC standards for DDR2 SDRAM.
- Package Type: Available in a 78-ball FBGA (Fine Ball Grid Array) package, facilitating space-efficient designs.
- Latency: Offers low latency options to enhance performance in memory-intensive applications.
- Temperature Range: Designed for commercial temperature range (0°C to 70°C), suited for consumer electronics.
- Applications: Commonly used in applications like graphics cards, networking equipment, and embedded systems.
Overall, the MT47H128M16RT-25E:C is ideal for high-speed data processing and efficient memory management in modern electronic devices.

The MT47H128M16RT-25E:C is a DRAM memory chip packaged in a 78-ball FBGA (Fine Ball Grid Array) configuration. This package type is designed for high-density applications, offering efficient space utilization and thermal performance.

The MT47H128M16RT-25E:C is a DDR3 SDRAM memory chip with a pin count of 78. It is designed for high-speed memory applications in computing devices. The chip features a 1Gb (128Mx16) organization, operates at a supply voltage of 1.5V, and supports data rates of up to 1600 MT/s.
Key functions include:
1. Data Storage: Provides temporary storage for data being processed by the CPU.
2. Read/Write Operations: Supports both read and write operations at high speeds.
3. Burst Mode: Facilitates burst read and write accesses, enhancing throughput.
4. Banking Architecture: Contains multiple banks (8), allowing concurrent operations to improve performance.
The part number also indicates it is a commercial-grade component, suitable for a variety of applications, such as laptops, desktops, and servers.

The manufacturer of the MT47H128M16RT-25E:C is Micron Technology, Inc. Micron is a global leader in the semiconductor industry, specializing in memory and storage solutions. Founded in 1978 and headquartered in Boise, Idaho, Micron designs and produces a wide range of memory products, including DRAM, NAND flash memory, and solid-state drives (SSDs). The company serves various markets, such as computing, mobile devices, automotive, and data centers. Micron is known for its innovation in memory technology and plays a significant role in advancing data storage and processing capabilities across multiple applications.

The MT47H128M16RT-25E:C is a DRAM memory chip commonly used in applications such as embedded systems, consumer electronics, networking devices, telecommunications, and industrial automation. Its high-density and performance capabilities make it suitable for tasks requiring substantial memory bandwidth, including graphics processing, data buffering, and mobile applications.

The MT47H128M16RT-25E:C chip is a DDR3 SDRAM memory component. Equivalent products may include:
1. Hynix H5TQ1G83AFR
2. Samsung K4B4G1646F
3. Micron MT41K256M16HA-125
Always verify compatibility based on specific application requirements such as speed, voltage, and form factor.