MT47H64M16HR-25:H

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MT47H64M16HR-25:H

IC DRAM 1GBIT PARALLEL 84FBGA

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Spezifikationen

Part Status Obsolete
Base Product Number MT47H64M16
DigiKey Programmable Not Verified
Memory Type Volatile
Memory Format DRAM
Technology SDRAM - DDR2
Memory Size 1Gbit
Memory Organization 64M x 16
Memory Interface Parallel
Clock Frequency 400 MHz
Write Cycle Time - Word, Page 15ns
Voltage - Supply 1.7V ~ 1.9V
Operating Temperature 0°C ~ 85°C (TC)
Mounting Type Surface Mount
Package 84-TFBGA
Supplier Device Package 84-FBGA (8x12.5)
Packaging Tray
Access Time 400 ps

Übersicht

Description

The MT47H64M16HR-25:H is a DDR3 SDRAM (Double Data Rate Synchronous Dynamic Random Access Memory) chip manufactured by Micron Technology. It features a density of 1GB (64 Meg x 16 bits) and operates at a nominal voltage of 1.5V. The “25” in the part number indicates a speed grade of 1.6 Gb/s, while the “H” denotes the high-temperature grade.
This memory module is designed for use in various applications, including desktops, laptops, and servers, delivering efficient performance for data-intensive tasks. It utilizes a 66-pin TSOP (Thin Small Outline Package) and supports features like burst mode and improved pipelining for enhanced data transfer rates.
Overall, the MT47H64M16HR-25:H is a reliable solution for memory needs, balancing speed and power efficiency, making it suitable for modern computing environments.

Features

The MT47H64M16HR-25:H is a DRAM memory chip manufactured by Micron Technology. Key features include:
1. Type: DDR3 SDRAM (Double Data Rate 3 Synchronous Dynamic RAM).
2. Capacity: 1GB (64 Meg x 16 bits).
3. Speed: Operates at a 1333 MT/s (mega transfers per second) data rate.
4. Organization: 64M x 16 configuration, suitable for various applications in memory modules.
5. Voltage: Operates at 1.5V, which is standard for DDR3, providing energy efficiency.
6. Package: Offered in a 78-ball TFBGA (Thin Fine Ball Grid Array), contributing to space-saving designs.
7. Features: Supports various advanced functionalities such as burst mode, random access, and self-refresh capabilities.
8. Applications: Commonly used in computers, servers, and embedded systems.
The MT47H64M16HR-25:H is designed for reliability and performance, making it suitable for high-density memory needs.

Package

The MT47H64M16HR-25:H is typically packaged in a standard 78-ball TFBGA (Thin Fine Pitch Ball Grid Array) form factor. This package type is designed for high-density memory applications, providing efficient thermal performance and space-saving benefits.

Pinout

The MT47H64M16HR-25:H is a 1Gb DDR3 SDRAM memory chip with a pin count of 78. This device is organized as 64 Meg x 16 bits and is designed for applications requiring high-performance memory solutions.
Key functions include:
- Power Supply: Operates with a core voltage of 1.5V (VDD) and a I/O voltage of 1.5V (VDDQ).
- Data Input/Output: Supports 16-bit data width for simultaneous read/write operations.
- Clock Input: Utilizes a clock signal for synchronization of data transfers.
- Address and Command Inputs: Accepts commands and addresses for memory access.
- Control Signals: Includes signals like CS (Chip Select), RAS (Row Address Strobe), CAS (Column Address Strobe), and WE (Write Enable) for managing memory operations.
The device is suitable for various applications, including computing and telecommunications, offering features like burst mode and enhanced data rates.

Manufacturer

The manufacturer of the MT47H64M16HR-25:H is Micron Technology, Inc. Micron is a leading global provider of memory and storage solutions, including DRAM, NAND flash, and other semiconductor products. Founded in 1978 and headquartered in Boise, Idaho, Micron serves a diverse range of markets, including computing, consumer electronics, automotive, and industrial sectors. The company is known for its innovation in memory technology and plays a significant role in advancing the capabilities of digital devices. Micron is publicly traded and is one of the largest manufacturers of memory chips in the world.

Application

The MT47H64M16HR-25:H is a DDR3 SDRAM memory chip primarily used in applications such as consumer electronics, computers, servers, and networking equipment. It supports high-speed data transfer and is suitable for laptops, desktops, industrial computers, and embedded systems that require efficient memory performance for tasks like gaming, multimedia processing, and data storage.

Equivalent

The MT47H64M16HR-25:H chip is a DDR3 SDRAM memory module. Equivalent products include:
1. Hynix H5TQ1G83EFR
2. Samsung K4B4G1646E
3. Micron MT41J128M16HA
Ensure to verify specifications such as speed, voltage, and density for compatibility.

Versand

VersandmethodenWir

bieten Sie globale Versanddienstleistungen durch DHL, FedEx, TNT, UPS oder einen anderen Spediteur Ihrer Wahl.


Versandgebührenreferenz (DHL/FedEx):

DHL: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 2-5 Werktagen.

von FedEx: Versandkosten reichen von $25-$40 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

EMS: Versandkosten reichen von $30-$50 (0.5kg), mit einer geschätzten Lieferzeit von 7-15 Werktagen.

Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.

Zahlungen

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